Method of fabricating photomask

Abstract

A method of fabricating a photomask includes selectively exposing portions of a photomask blank with radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device structures.

Description

technical field [0001] Embodiments of the present invention relate to lithography, and more particularly to a photomask for lithography and a method for forming the same. Background technique [0002] As the semiconductor industry progresses to nanotechnology process nodes for higher device density, higher performance, and lower cost, the challenges faced by fabrication and design are also greater. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation of integrated circuits. As integrated circuits evolve, functional density (eg, the number of interconnect devices contained in a unit chip area) generally increases as geometric dimensions (eg, the smallest component or circuit that can be produced by a process) shrink. Process geometries generally benefit from increased throughput and reduced costs. These size reductions also increase the ...

AI Technical Summary

Problems solved by technology

Particles and etch residues can cause imaging defects when using photomasks if the cleaning step does not completely remove them

Images