A method and a system for realizing binary parallel addition based on a phase change memory

Abstract

The invention discloses a method and system for realizing binary parallel addition based on a phase change memory, and the method comprises the steps: a first phase change memory receives a first pulse signal, and converts the first pulse signal into a corresponding first resistance value; The first amplification circuit reads the first resistance value and amplifies the first resistance value toobtain a corresponding first voltage value; The first analog-to-digital conversion circuit converts the first voltage value into first two-bit binary data; The second phase change memory receives thesecond pulse signal and converts the second pulse signal into a corresponding second resistance value; The second amplification circuit reads the second resistance value and amplifies the second resistance value to obtain a corresponding second voltage value; The second analog-to-digital conversion circuit converts the second voltage value into second two-bit binary data; And the decoding circuitis used for carrying out addition operation on the first two-bit binary system and the second two-bit binary system to obtain three-bit binary data and outputting the three-bit binary data. Accordingto the invention, the two-bit binary parallel addition calculation is realized by applying pulses to the phase change memory unit and combining the processing of a subsequent circuit.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a method and system for realizing binary parallel addition based on a phase-change memory. Background technique [0002] Phase-change memory is a non-volatile memory developed by utilizing the characteristics of phase-change materials that can quickly and repeatedly switch between crystalline and amorphous states and that different states have huge property differences. It is expected to replace flash memory as the next-generation mainstream memory . Switching between states is currently mainly achieved by applying pulses. There are two types of operations for phase-change memory cells: SET and RESET. The SET operation is to apply a pulse with a longer duration and medium amplitude to the phase change unit to reduce the crystallization resistance, and the RESET operation is to apply a pulse with a shorter duration and higher amplitude to amorphize the r...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of the prior art, the purpose of the present invention is to solve the technical problem that the existing calculations using phase change memory are mostly serial calculations and the calculation speed is very slow

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