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Thermoelectric component
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A technology of thermoelectric elements and components, which is applied in the field of electronics, can solve the problems of low figure of merit, limitations, and low efficiency of thermoelectric conversion, so as to reduce the loss of cold and heat and expand the market space.
Pending Publication Date: 2019-06-04
成志华
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Since the figure of merit of the existing thermoelectric element is equal to that of the thermoelectric material, and the figure of merit of the current thermoelectric material is 0.004K -1 Therefore, the figure of merit of existing thermoelectric elements is low, and the working efficiency of thermoelectric conversion is not high. The applications of thermoelectric power generation devices, thermoelectric refrigeration devices or semiconductorrefrigeration devices and other thermoelectric products and devices manufactured by existing thermoelectric elements are subject to limitations
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example 1
[0024] Example 1: A thermoelectric component, the figure of merit Z of the thermoelectric material 材 =0.003K -1 , the cross-sectional area S of the thermoelectric element 1 1 = 4 square millimeters, length L 1 = 4 mm, the cross-sectional area S of the thermoelectric element 2 2 = 4 square millimeters, length L 2 = 1 mm. The cross-sectional area of the junction S 3 = 0.2 square millimeters.
[0025] Then S 1 / S 3 =20,Z 3 = Z 1 =0.003K -1 ×20=0.06K -1 . Therefore, under adiabatic conditions, the figure of merit of this semiconductor thermoelectric component from the hot end to the cold end is 0.06 K -1 , the direction is from the hot end of thermoelectric element 1 to the cold end of thermoelectric element 2.
example 2
[0026] Example 2: A semiconductor thermoelectric component, the figure of merit Z of the thermoelectric material 材 =0.0025K -1 , the cross-sectional area S of the thermoelectric element 1 1 =3 square millimeters, the cross-sectional area S of the thermoelectric element 2 2 = 2 square millimeters, L 1 = 2 mm, L 2 = 1 mm, the cross-sectional area S of the joint 3 = 0.1 square millimeters.
[0027] Then S 1 / S 3 = 30, Z 3 = Z 1 =0.0025K -1 ×30=0.075K -1 . Therefore, under adiabatic conditions, the figure of merit of this semiconductor thermoelectric component from the hot end to the cold end is 0.075 K -1 , the direction is from the hot end of thermoelectric element 1 to the cold end of thermoelectric element 2.
example 3
[0028] Example 3: A semiconductor thermoelectric component, the figure of merit Z of the thermoelectric material 材 =0.0035K -1 , the cross-sectional area S of the thermoelectric element 1 1 = 4 square millimeters, S 2 = 4 square millimeters, L 1 = 4 mm, L 2 = 1 mm. The thermoelectric element 1 and the thermoelectric element 2 are connected by welding, and the cross-sectional area S of the joint is 3 =0.1mm², without considering the welding resistance, then S 1 / S 3 = 40, Z 3 = Z 1 =0.0035K -1 ×40=0.14K -1 . Therefore, under adiabatic conditions, the figure of merit of this semiconductor thermoelectric component from the hot end to the cold end is 0.14 K -1 , the direction is from the hot end of thermoelectric element 1 to the cold end of thermoelectric element 2.
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Abstract
The invention provides a thermoelectric component comprising a thermoelectric element 1 and a thermoelectric element 2. One end of the thermoelectric element is connected with one end of the thermoelectric element 2 to form one body, and the other ends of the thermoelectric element 1 and the thermoelectric element 2 are a hot end and a cold end, wherein the cross-sectional area of the thermoelectric element 1 and the cross-sectional area of the thermoelectric element 2 are larger than the cross-sectional area of a connection part of the thermoelectric element 1 and the thermoelectric element 2. The figure-of-merit coefficient of the thermoelectric component from the hot end to the cold end is larger than the figure-of-merit coefficient of other materials, the thermoelectric component is suitable for the manufacturing of thermoelectric product devices and apparatuses such as thermoelectric power generation devices, thermoelectric refrigeration or semiconductorrefrigeration and thermocouple so as to improve the efficiency of apparatuses or power generation devices, and the market space is expanded.
Description
technical field [0001] The invention relates to a thermoelectric component and belongs to the technical field of electronics. Background technique [0002] Thermoelectric material is a functional material that can convert heat energy and electric energy. The value of figure of merit of thermoelectric material determines the level of thermoelectric conversion efficiency. Since the figure of merit of the existing thermoelectric element is equal to that of the thermoelectric material, and the figure of merit of the current thermoelectric material is 0.004K -1 Therefore, the figure of merit of existing thermoelectric elements is low, and the working efficiency of thermoelectric conversion is not high. The applications of thermoelectric power generation devices, thermoelectric refrigeration devices or semiconductorrefrigeration devices and other thermoelectric products and devices manufactured by existing thermoelectric elements are subject to limited. Contents of the inventi...
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