Check patentability & draft patents in minutes with Patsnap Eureka AI!

Memory device

A posture and memory technology, applied in character and pattern recognition, biological neural network models, instruments, etc., can solve problems such as weight update asymmetry and nonlinearity

Inactive Publication Date: 2019-06-07
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, weight updates are asymmetric and non-linear

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device
  • Memory device
  • Memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description forming a first feature over or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include between the first feature and the second feature Embodiments where the additional features are formed such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for the sake of brevity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory device includes first wires, second wires, resistors, and a processor. Input signals are transmitted from the first wires through the resistors to the second wires. The processor receives a sum value of the input signals from one of the second wires, and shifts the sum value by a nonlinear activation function to generate a shifted sum value. The processor calculates a backpropagation value based on the shifted sum value and a target value, and generates a pulse number based on a corresponding input signal of the input signal and the backpropagation value. Each of a value of the corresponding input signal and the backpropagation value is higher than or equal to a threshold value. The processor applies a voltage pulse to one of the resistors related to the corresponding input signalbased on the pulse number.

Description

technical field [0001] This case is about a basic electronic component, and in particular a memory-type device. Background technique [0002] In software-defined neural networks (NNs), weight updates are precisely calculated via mathematical equations, and the values ​​of the weight updates are then stored in digital memory. In hardware neural networks (HNNs), weight updates are computed directly and stored in the synapse based on the effective number of spikes a synapse receives during a weight update. The weight state of the synapse based on Resistive Random Access Memory (RRAM) has limited precision and is bounded. Furthermore, weight updates are asymmetric and non-linear. SUMMARY OF THE INVENTION [0003] A technical aspect of the content of this application relates to a memory-type device including a plurality of first wires, a plurality of second wires, a plurality of resistors, and a processor. A plurality of second wires are provided to span the plurality of fir...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06N3/04G06N3/063G06N3/08
CPCG06N3/063G06N3/084G06N3/061G06N3/08G06V30/414G06F18/24317
Inventor 侯拓宏张志丞
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More