Method for growing two-dimensional nanostructure through quick physical vapor deposition

Abstract

The invention discloses a method for growing a two-dimensional nanostructure through quick physical vapor deposition. The characteristic of gradient distribution of the temperature of a tubular furnace and the advantage of movability of a reaction quartz tube are ingeniously utilized; when a quartz boat for placing a reaction raw material is arranged in a heating center, the temperature of the area far away from the center can be lowered to form gradient; and when the quartz boat moves to the heating center, the reaction raw material is heated to the target temperature through the ultrafast heating speed, and a growing substrate starts to grow at the appropriate temperature. The method has the advantages of ultrafast temperature rising speed, no mass loss of a growing source during the temperature rising process, capabilities on accurately regulating and controlling the growing temperature and the growing time, and the like; in addition, H2 and Ar are adopted as carrier gases, and an ultrathin GeSe nanosheet with the thickness being around 15nm can be successfully grown through optimizing the conditions such as the reaction raw material sublimation temperature, the gas proportion,the gas flow, the growing time and the like; and the method is simple and high-efficiency in preparation process, can realize large-scale industrial production, and has a wide application prospect.

Description

technical field [0001] The invention belongs to the field of nanometer materials, in particular to a method for growing a two-dimensional nanostructure by rapid physical vapor deposition. Background technique [0002] GeSe is a simple binary layered compound of Group IV-VI, with large reserves of raw materials, low toxicity, and absorptivity (>10 4 cm -1 ) large, mobility (128.6 cm 2 ·V -1 ·s -1 ) high, while the bandgap width (1.14 eV) is suitable, the theoretical photoelectric conversion efficiency can reach more than 30%, very suitable for the production of new thin-film solar cells, which has aroused great interest. Structurally, GeSe belongs to the orthorhombic crystal system, and the unit cells span two layers and are stacked along the crystal c-axis. Ge atoms and Se atoms in each layer are bonded by covalent bonds, while atoms between layers are bonded by relatively weak van der Waals forces. In addition, the presence of lone electron pairs enhances the intra...

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Problems solved by technology

However, the GeSe nanosheets grown by the liquid phase synthesis method have a large thickness, are ea

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