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Data readout circuit and method of phase change memory

A phase change memory, data readout technology, applied in the field of microelectronics, can solve the problems of high read power consumption, small readout window, slow readout speed of phase change memory, etc., to reduce the misread rate and increase the window. value, the effect of speeding up

Active Publication Date: 2021-04-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a data readout circuit and method of a phase change memory, which is used to solve the problems of slow readout speed, high read power consumption and small reading window

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  • Data readout circuit and method of phase change memory
  • Data readout circuit and method of phase change memory
  • Data readout circuit and method of phase change memory

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Embodiment Construction

[0048] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] see Figure 3 ~ Figure 6 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbi...

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Abstract

The invention provides a data reading circuit and method for a phase change memory. The data reading circuit comprises a reference reading voltage generating circuit, a reading voltage pre-charging circuit, a target phase change memory unit, an unselected phase change memory unit and a voltage comparator circuit, Wherein the reference read voltage generation circuit is connected with the voltage comparator circuit; The reading voltage pre-charging circuit is connected with a bit line where the target phase change storage unit is located and a bit line where the unselected phase change storageunit is located. wherein the target phase change storage unit is connected with the voltage comparator circuit, the unselected phase change storage unit is connected with the voltage comparator circuit, and the voltage comparator circuit is connected with the reading voltage pre-charging circuit. The data reading circuit and method of the phase change memory are high in reading speed, low in powerconsumption and low in misreading rate.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a data readout circuit and method of a phase-change memory. Background technique [0002] Phase-change memory is a new type of resistive non-volatile semiconductor memory. It uses chalcogenide compound materials as storage media, and utilizes phase-change materials processed to nanometers in polycrystalline state (the material is in a low-resistance state) and In the amorphous state (the material is in a high-resistance state), different resistance states are used to store data. [0003] Phase change memory is based on the Ovshinsky electronic effect memory proposed by Ovshinsky in the late 1960s. It generally refers to chalcogenide random access memory, also known as Ovshinsky electric effect unified memory. As a new type of memory, phase change memory, due to its fast read and write speed, high rewritable durability, long information retention time, low power consumpt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
Inventor 李喜解晨晨陈后鹏陈一峰宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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