Sb-Se-Ti series nano-composite phase change film for phase change memory and preparation method thereof

A phase-change memory, sb-se-ti technology, applied in the field of microelectronic materials, can solve the problems of weak data retention operation power consumption, insufficient crystalline resistance, and insufficient crystallization temperature, so as to achieve good market application potential and maintain The effect of long-term and high crystallization temperature

Active Publication Date: 2019-06-18
JIANGSU UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the shortcomings of the Sb-Se alloy in the prior art, the crystallization temperature is not high enough, and the crystal resistance is not large enough, which leads to the weak data retention of the phase change material Power and high operating power consumption seriously restrict its application in phase change memory. The invention provides a Sb-Se-Ti ternar

Method used

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  • Sb-Se-Ti series nano-composite phase change film for phase change memory and preparation method thereof
  • Sb-Se-Ti series nano-composite phase change film for phase change memory and preparation method thereof
  • Sb-Se-Ti series nano-composite phase change film for phase change memory and preparation method thereof

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Embodiment

[0021] The present embodiment provides a kind of composition is (Sb 0.5 Se 0.5 ) 0.88 Ti 0.12 , the thickness of the film is a Sb-Se-Ti nano phase change film of 50nm, the main steps of the main preparation method of the phase change film are as follows:

[0022] 1), cleaning SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0023] (a) The substrate is placed in an ethanol solution, and ultrasonically cleaned for 10 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0024] (b) Place the substrate in an acetone solution and clean it ultrasonically for 10 minutes to remove organic matter on the surface of the substrate.

[0025] (c) The substrate is placed in deionized water, cleaned with ultrasonic waves for 10 minutes, and the surface is cleaned again; impurities;

[0026] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box fo...

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Abstract

The invention discloses a Sb-Se-Ti series nano-composite phase change film for a phase change memory. The chemical composition of the film fits the general formula of (SbxSe1-x)1-yTiy, wherein x is greater than 0.25 and less than 0.95, and y is greater than 0.01 and less than 0.3. The Sb-Se-Ti series nano-composite phase change film, by doping titanium elements of different contents into the Sb-Sephase change material, obviously improves crystallization temperature of the Sb-Se phase change material, significantly enhances crystallization activation and substantially improves data retention,thereby improving the thermal stability, keeping the data of the PCRAM device longer and making the data storage more reliable. At the same time, the doping of the titanium elements of different contents improves the crystalline resistivity to further reduce RESET current, which is beneficial to the reduction of power dissipation of the PCRAM device. The (SbxSe1-x)1-yTiy nano phase change film material has high crystallization temperature and crystallization activation capability and data retention for ten years, is beneficial to the improvement of the stability of PCRAM and has good market application potential.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and in particular relates to a preparation method and application of a Sb-Se-Ti nanocomposite phase-change film used for a phase-change memory. Background technique [0002] American scientist Stanford Ovshinsky proposed the concept of semiconductor chalcogenides (Chalcogenides) material crystalline-amorphous phase change storage in the 1960s. Due to the non-volatility and anti-interference characteristics of the reversible phase transition of semiconductor thin films, phase change storage has become one of the main means of digital storage technology. As an information storage medium, phase-change thin film materials need to meet several conditions before they can be applied to fast, high-density, low-power semiconductor memories. The selection of phase change materials usually needs to meet the following conditions: good thermal stability, short phase change time, large high-...

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Application Information

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IPC IPC(8): H01L45/00C23C14/16C23C14/35
Inventor 吴卫华朱小芹眭永兴郑龙胡益丰邹华
Owner JIANGSU UNIV OF TECH
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