Unlock instant, AI-driven research and patent intelligence for your innovation.

Vacuum compatible graph transfer method and system

A pattern transfer and vacuum technology, which is applied in the photoplate making process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problem that the photoresist cannot withstand high temperature, the vacuum environment is not compatible, and the process of limiting material growth process temperature and other issues

Active Publication Date: 2019-07-05
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] like figure 1 As shown, the existing pattern transfer technology uses photoresist / electron beam glue as a mask, and the whole process is carried out under normal pressure, using a developer and an organic solvent, which is incompatible with a vacuum environment; and the photoresist cannot withstand High temperature, which limits the temperature of the subsequent material growth process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum compatible graph transfer method and system
  • Vacuum compatible graph transfer method and system
  • Vacuum compatible graph transfer method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In view of the deficiencies in the prior art, the inventor of the present application was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0022] An embodiment of the present invention provides a method for vacuum compatible pattern transfer, comprising the following steps:

[0023] An inorganic mask is provided, which includes a first inorganic mask and a second inorganic mask sequentially disposed on a substrate;

[0024] A pattern is formed on the second inorganic mask,

[0025] transferring the pattern into the first inorganic mask by at least a selective vapor etch process,

[0026] growing target material at least in the patterned area of ​​the first inorganic mask,

[0027] Remove the inorganic reticle.

[0028] Further, the method includes: at least using physical and / or chemical processing t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vacuum compatible graph transfer method and system. The method comprises the following steps: providing an inorganic mask, wherein the inorganic mask comprises a first inorganic mask and a second inorganic mask which are sequentially arranged on a substrate; and forming a pattern on the second inorganic mask plate through processing, at least transferring the pattern intothe first inorganic mask plate by using a selective gas phase etching process, growing a target material at least in the pattern area of the first inorganic mask plate, and removing the inorganic mask plate. According to the invention, the method avoids the use of developing solution, a solvent and an organic mask.

Description

technical field [0001] The invention particularly relates to a method and system for vacuum compatible pattern transfer, belonging to the technical field of micro-nano manufacturing. Background technique [0002] The pattern transfer step in the traditional semiconductor process generally uses photoresist / electron beam glue as a mask. The entire process is carried out under normal pressure, and the developer and organic solvent are used, which is incompatible with the vacuum environment. [0003] like figure 1 As shown in the figure, the existing pattern transfer technology uses photoresist / electron beam glue as a mask, and the whole process is carried out under normal pressure, using developer and organic solvent, which is incompatible with vacuum environment; and the photoresist cannot withstand The high temperature limits the processing temperature of the subsequent material growth process. SUMMARY OF THE INVENTION [0004] The main purpose of the present invention is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F1/00G03F1/76
CPCG03F1/20G03F1/76H01L21/0274H01L21/0275
Inventor 熊康林陆晓鸣黄增立徐蕾蕾冯加贵李坊森丁孙安杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI