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Semiconductor device and method of forming the same

A technology of semiconductor and predetermined area, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., and can solve problems such as reducing reliability

Active Publication Date: 2021-03-26
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the process of high-voltage integrated circuit components is integrated into the process of low-voltage integrated circuit components, the formed low-voltage integrated circuit components may be affected by the process of high-voltage integrated circuit components and reduce their reliability.

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Embodiment Construction

[0030] The following summary provides many different embodiments or examples for implementing different features of the present invention. The following summary describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the embodiment of the present invention describes that a first feature is formed on or above a second feature, it means that it may include an embodiment in which the above-mentioned first feature is in direct contact with the above-mentioned second feature, and may also include Embodiments in which additional features are formed between the above-mentioned first feature and the above-mentioned second feature such that the above-mentioned first feature and the second feature may not be in direct contact.

[0031] It should be understood that additional operational steps may be implemented before, during or after the method, and in othe...

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PUM

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Abstract

Embodiments of the disclosure relate to a method for forming a semiconductor device. First, a substrate is provided, and a first well region and a second well region having opposite conductive types are formed in a predetermined high side region of the substrate. Then, a high side region oxide is formed on the substrate of the predetermined high side region, and then a third well region and a fourth well region having opposite conductive types are formed in a predetermined low side region of the substrate. Then, a low side region oxide is formed on the substrate of the predetermined low side region.

Description

technical field [0001] The present invention relates to a method for forming a semiconductor device, and in particular to a method for forming a well in a high potential region and a well in a low potential region of a semiconductor device. Background technique [0002] In the manufacture of semiconductor devices, it is sometimes necessary to integrate the process of high-voltage integrated circuit elements into the process of low-voltage integrated circuit elements, so as to integrate the high-voltage integrated circuit elements and low-voltage integrated circuit elements into the semiconductor device at the same time. [0003] However, when the process of the high-voltage integrated circuit is integrated into the process of the low-voltage integrated circuit, the formed low-voltage integrated circuit may be affected by the process of the high-voltage integrated circuit, thereby reducing its reliability. Contents of the invention [0004] An embodiment of the present inve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092
CPCH01L21/8238H01L21/823892H01L27/0922
Inventor 韦维克陈柏安
Owner NUVOTON