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An image sensor and its manufacturing method

A technology of image sensor and photosensitive element, which is applied in the direction of semiconductor devices, electric solid-state devices, radiation control devices, etc., and can solve the problems of low photoelectric conversion efficiency and poor sensitivity of image sensors

Active Publication Date: 2022-04-29
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an image sensor and its preparation method, which are used to solve the problems of low photoelectric conversion efficiency and poor sensitivity of the image sensor in the prior art.

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  • An image sensor and its manufacturing method
  • An image sensor and its manufacturing method

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Embodiment Construction

[0040] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of the components and steps, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

[0041] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application or uses in any way.

[0042] Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods, and apparatus should be considered a part of this specification.

[0043] In all examples shown and discussed herein, any specific value should be construed as illustrative only and not as limiting. Accordingly, other examples of exemp...

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Abstract

The invention relates to an image sensor and a manufacturing method thereof. The image sensor includes a photosensitive element formed in a substrate to convert an optical signal into an electrical signal; a color filter layer formed on the photosensitive element; a first microlens formed on the color filter layer, and the The first microlens protrudes toward the direction of the incident light to converge the incident light; and the second microlens is formed between the photosensitive element and the color filter layer and includes a plurality of sub-microlenses separated by a plurality of grooves lens such that the second microlens has an average refractive index decreasing from the center to the edge.

Description

technical field [0001] The present disclosure relates to the field of semiconductor technology, and in particular, to an image sensor and a preparation method thereof. Background technique [0002] An image sensor that includes a photosensitive element is a device that converts an optical image into an electronic signal. Image sensors receive optical signals from objects and convert the optical signals into electrical signals, which can then be transmitted for further processing, such as digitization, and then stored in a storage device such as a memory, optical or magnetic disk, or used in a display. display, print, etc. According to different digital data transmission methods, image sensors can be divided into two categories: Charge Coupled Device (CCD, ChargeCoupled Device) and Metal Oxide Semiconductor (CMOS, Complementary Metal-Oxide Semiconductor). Among them, CMOS sensors have developed rapidly in recent years due to their advantages of high integration, low power c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/14627H01L27/14629H01L27/14683H01L27/14685
Inventor 黄增智龙海凤夏睿倪凌云黄晓橹
Owner 淮安西德工业设计有限公司