A method for preparing graphene by plasma-enhanced chemical vapor deposition

A plasma-enhanced chemical technology, applied in the field of ion-enhanced chemical vapor deposition to prepare graphene, which can solve the problems of uncontrollable number of layers and size, poor film integrity, etc.

Inactive Publication Date: 2021-03-05
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the graphene deposited on the substrate is easily damaged by the plasma, the existing PECVD-prepared graphene films have poor integrity and uncontrollable layer number and size.

Method used

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  • A method for preparing graphene by plasma-enhanced chemical vapor deposition
  • A method for preparing graphene by plasma-enhanced chemical vapor deposition
  • A method for preparing graphene by plasma-enhanced chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A method for preparing graphene by plasma-enhanced chemical vapor deposition, comprising the following steps in turn:

[0041] 1) Prepare dilute hydrochloric acid with analytically pure concentrated hydrochloric acid and deionized water at a ratio of 1:10, put the copper foil in dilute hydrochloric acid and ultrasonically clean it for 10 minutes, remove it, and then put it into deionized water, acetone and isopropanol in turn Ultrasonic cleaning for 5 min, respectively, and drying.

[0042] 2) Cut the first piece from the copper foil, wind the first piece of copper foil into a copper tube, put the copper tube into the quartz tube, the copper tube is close to the inner wall of the quartz tube, and the copper tube and the quartz tube are aligned; Cut the second piece from the foil as the copper base, put the copper base into the copper tube, and the copper base is located at the back end of the copper tube. In this embodiment, the positional relationship of the quartz tu...

Embodiment 2～ Embodiment 5

[0047] The difference between Embodiment 2 to Embodiment 5 and Embodiment 1 lies in that the hydrogen flow rate in step 5) is different. The remaining steps of Embodiment 2 to Embodiment 5 are the same as in Embodiment 1. Table 1 is a comparison table of the hydrogen flow rates used in step 5) of Examples 1 to 5.

[0048] Table 1 Embodiment 1~Example 5 in step 3) the hydrogen flow comparison table that adopts

[0049]

Embodiment 6

[0051] The difference between embodiment 6 and embodiment 3 lies in that the radio frequency power in step 5) is different, and the radio frequency power used in step 5) in embodiment 6 is 100W. The remaining steps of embodiment 6 are all the same as embodiment 3.

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PUM

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Abstract

The invention provides a method for preparing graphene by plasma-enhanced chemical vapor deposition, which reduces damage to graphene caused by plasma in the preparation process and grows uniform and continuous high-quality graphene. The method for preparing graphene comprises the following steps in turn: 1) putting the copper tube into the quartz tube, and putting the substrate into the copper tube; 2) putting the quartz tube with the copper tube and the substrate into the plasma-enhanced chemical vapor deposition In the reaction furnace, feed hydrogen into the reaction furnace and anneal the substrate, then lower the temperature of the reaction furnace from the annealing temperature to 600°C; 3) adjust the hydrogen flow rate to 50-100 sccm and feed methane, the methane flow rate is 5 sccm , turn on the radio frequency, and carry out graphene growth, the radio frequency power is 200W, turn off the radio frequency and the heating device after 5-180min of growth, stop feeding hydrogen and methane into the reaction furnace, and cool the reaction furnace to room temperature.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by plasma-enhanced chemical vapor deposition. Background technique [0002] The following background art is provided to help the reader understand the present invention and is not to be admitted as prior art. [0003] Graphene is prepared by plasma-enhanced chemical vapor deposition (PECVD). The carbon source is cracked into active carbon atoms at low temperature by radio frequency, and the active carbon atoms are deposited on the substrate to form a graphene film. The preparation of graphene by PECVD requires low temperature, fast deposition rate and good film quality. Copper is commonly used as a metal substrate for growing graphene. In the prior art, when PECVD is used to prepare a graphene film, a copper substrate is usually placed directly in a quartz tube, so that activated carbon atoms are deposited on the substrate to form a graphene fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 赵沛邹振兴郑浩然张学薇任钱诚王宏涛
Owner ZHEJIANG UNIV
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