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Evaluation method of ferroelectric thin film temperature reliability

A technology of ferroelectric thin film and evaluation method, which is applied in environmental/reliability testing, measuring electricity, measuring electrical variables, etc., and can solve problems such as inappropriate temperature reliability testing

Inactive Publication Date: 2019-07-19
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is implemented in the later stage of the product process, and it is not suitable for temperature reliability testing of failed products caused by basic factors such as electronic materials and device physical structures, especially for various new electronic material integrated devices

Method used

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  • Evaluation method of ferroelectric thin film temperature reliability
  • Evaluation method of ferroelectric thin film temperature reliability
  • Evaluation method of ferroelectric thin film temperature reliability

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Embodiment Construction

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] see figure 1 , a method for evaluating the temperature reliability of a ferroelectric thin film proposed in the first embodiment of the present invention, which includes steps S101 to S104:

[0040] In step S101, the initial characteristics of the ferroelectric thin film sample are obtained, so as to obtain the initial performance par...

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Abstract

The invention discloses an evaluation method of ferroelectric thin film temperature reliability. The method comprises the steps that initial characteristics of a ferroelectric thin film sample are acquired, so that initial performance parameters of the ferroelectric thin film sample are obtained; pre-polarization processing is performed on the ferroelectric thin film sample, and a residual polarization value is measured; and according to the ratio of a pyroelectric coefficient and relevant parameters of the ferroelectric thin film sample to the residual polarization value, whether the ferroelectric thin film sample is qualified or not is determined. According to the method, device performance reliability reduction, caused by ferroelectric thin film performance fluctuation resulting from anambient temperature change, of a ferroelectric integrated device can be pre-evaluated, the product research and development cycle can be effectively shortened, product research and development investment cost is lowered, and the actual application demand is met.

Description

technical field [0001] The invention relates to the field of electronic material performance testing, in particular to an evaluation method for the temperature reliability of a ferroelectric thin film. Background technique [0002] Ferroelectric materials are a kind of dielectric materials that have spontaneous polarization characteristics in a certain temperature range, and their polarization intensity can be changed under the action of an external electric field. Ferroelectric memory is a new generation of non-volatile memory that integrates ferroelectric thin film materials with traditional silicon-based semiconductors. Among various new types of memory, ferroelectric memory stands out due to its advantages of non-volatility, low power consumption, high speed, long life and radiation resistance, and is considered to be one of the most promising next-generation mainstream memories. In addition, as a functional material, ferroelectric thin films occupy an important positio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00
CPCG01R31/003
Inventor 彭强祥罗远东杨琼廖敏周益春
Owner XIANGTAN UNIV
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