Asymmetric MZI optical waveguide temperature sensor based on loaded strip-shaped structure and preparation method thereof
A technology of temperature sensor and strip waveguide, which is applied in the field of asymmetric MZI optical waveguide temperature sensor based on loaded strip structure and its preparation, can solve the problems of limiting the practical application of temperature sensor and the inability to realize the temperature monitoring function, etc. Large-scale production, exacerbating the change of output light intensity, and the effect of process compatibility
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[0046] Cleaning treatment of silicon substrate: soak the silicon substrate in an acetone solution for ultrasonic cleaning for 8 minutes, then repeatedly wipe it with acetone and ethanol cotton balls, rinse with deionized water, blow dry with nitrogen, and finally at 100°C Bake for 1 hour to remove moisture.
[0047] The polymer waveguide lower cladding layer is prepared by the spin coating process: the polymer material PMMA is spin coated on the cleaned silicon wafer substrate, the spin coating speed is controlled at 4000 rpm, and then the film is baked at 120°C for 2 hours , The waveguide undercladding with a thickness of 6μm is obtained.
[0048] The waveguide groove is prepared by standard photolithography and dry etching processes: First, an Al mask with a thickness of 100nm is vapor-deposited on the prepared polymer undercladding layer, and the Al film is spin-coated by a spin coating process A layer of positive photoresist BP212 with a thickness of 2μm is pre-baked at 85°C f...
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