A temperature sensor based on asymmetric MZI optical waveguide and its preparation method

A technology of temperature sensor and optical waveguide, applied in the direction of physical/chemical change thermometer, light guide, thermometer, etc., can solve the problems of losing temperature sensing function and limiting the practical application of temperature sensor with MZI optical waveguide structure

Active Publication Date: 2020-10-20
JILIN UNIV
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  • Application Information

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Problems solved by technology

At present, the temperature sensor based on the MZI optical waveguide structure is still only in the laboratory stage. Usually, a metal heating electrode is prepared on the sensing waveguide arm, and the temperature of the sensing arm waveguide is adjusted by changing the current passing through the electrode, and then come Simulate the change of the external environment temperature, but in the actual environmental temperature detection, the reference arm and the sensing arm of the MZI waveguide will be in the environment to be detected at the same time, and the effective refractive index of the two waveguide arms will change with the external environment temperature And the same change occurs, which makes it lose the temperature sensing function, and then seriously limits the practical application of the MZI optical waveguide structure temperature sensor

Method used

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  • A temperature sensor based on asymmetric MZI optical waveguide and its preparation method
  • A temperature sensor based on asymmetric MZI optical waveguide and its preparation method
  • A temperature sensor based on asymmetric MZI optical waveguide and its preparation method

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Embodiment 1

[0045] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution and ultrasonically clean it for 8 minutes, then repeatedly wipe it with acetone and ethanol cotton balls in sequence, rinse it with deionized water, dry it with nitrogen, and finally put it under the condition of 110°C Bake for 1.5 hours to remove moisture.

[0046] The lower cladding of the polymer waveguide was prepared by spin-coating: the polymer material PMMA was spin-coated on the cleaned silicon substrate, the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120°C for 2.5 hours , to obtain a waveguide lower cladding with a thickness of 4 μm.

[0047]The waveguide groove was prepared by standard photolithography and dry etching process: first, a layer of Al mask with a thickness of 100nm was evaporated on the prepared polymer lower cladding layer, and the Al film was spin-coated by spin-coating process. A layer of positive photoresist BP212 with a ...

Embodiment 2

[0053] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution and ultrasonically clean it for 8 minutes, then repeatedly wipe it with acetone and ethanol cotton balls in sequence, rinse it with deionized water, dry it with nitrogen, and finally put it under the condition of 110°C Bake for 1.5 hours to remove moisture.

[0054] The lower cladding of the polymer waveguide was prepared by spin-coating: the polymer material PMMA was spin-coated on the cleaned silicon substrate, the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120°C for 2.5 hours , to obtain a waveguide lower cladding with a thickness of 4 μm.

[0055] The waveguide groove was prepared by standard photolithography and dry etching process: first, a layer of Al mask with a thickness of 100nm was evaporated on the prepared polymer lower cladding layer, and the Al film was spin-coated by spin-coating process. A layer of positive photoresist BP212 with a...

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Abstract

The invention discloses an asymmetric MZI optical waveguide-based temperature sensor and preparation method thereof, and belongs to the technical field of planar optical waveguide sensors and preparation thereof. The whole sensor is based on an MZI optical waveguide structure, and consists of an input straight waveguide, a 3-dB Y branch beam splitter, a reference arm, a sensing arms parallel to the reference arm, and a 3-dB Y branch coupler in sequence from left to right, and consists of a silicon wafer substrate, a polymer lower coating layer prepared on the silicon wafer substrate and provided with a groove structure, an optical waveguide core layer prepared on the polymer lower coating layer and provided with an inverted ridge type waveguide structure, and a polymer upper coating layerprepared on the optical waveguide core layer in sequence from top to bottom. The waveguide type temperature sensor combines the advantages that the MZI optical waveguides are strong in interference effect and the organic polymer materials are large in thermos-optical coefficient; and through adopting two organic polymer materials with different thermo-optical coefficients for optical waveguide core layers of the sensing arms and the reference arms of the traditional ZMI waveguide temperature sensors, the aim of detecting the practical external environment temperature is achieved.

Description

technical field [0001] The invention belongs to the technical field of planar optical waveguide sensors and their preparation, in particular to a silicon wafer as a substrate and two organic polymer materials with different thermo-optic coefficients as two parallel Mach-Zehnder interferometer (MZI) structures. An optical waveguide temperature sensor of an interference arm optical waveguide core layer and a preparation method thereof. Background technique [0002] Temperature measurement is an important part of measurement and control technology, and it plays a very important role in various fields of national economy. People's daily life, the survival and reproduction of animals and plants, industrial and agricultural production, scientific research experiments and many other aspects are closely related to temperature measurement. Therefore, the accurate measurement of temperature has always been an important research topic. With the advancement of science and technology a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K11/00G02B6/125G02B6/138
Inventor 王希斌牛东海张大明廉天航姜明慧孙小强陈长鸣
Owner JILIN UNIV
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