A temperature sensor based on asymmetric MZI optical waveguide and its preparation method
A technology of temperature sensor and optical waveguide, applied in the direction of physical/chemical change thermometer, light guide, thermometer, etc., can solve the problems of losing temperature sensing function and limiting the practical application of temperature sensor with MZI optical waveguide structure
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Examples
Embodiment 1
[0045] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution and ultrasonically clean it for 8 minutes, then repeatedly wipe it with acetone and ethanol cotton balls in sequence, rinse it with deionized water, dry it with nitrogen, and finally put it under the condition of 110°C Bake for 1.5 hours to remove moisture.
[0046] The lower cladding of the polymer waveguide was prepared by spin-coating: the polymer material PMMA was spin-coated on the cleaned silicon substrate, the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120°C for 2.5 hours , to obtain a waveguide lower cladding with a thickness of 4 μm.
[0047]The waveguide groove was prepared by standard photolithography and dry etching process: first, a layer of Al mask with a thickness of 100nm was evaporated on the prepared polymer lower cladding layer, and the Al film was spin-coated by spin-coating process. A layer of positive photoresist BP212 with a ...
Embodiment 2
[0053] Cleaning treatment of silicon substrate: Soak the silicon substrate in acetone solution and ultrasonically clean it for 8 minutes, then repeatedly wipe it with acetone and ethanol cotton balls in sequence, rinse it with deionized water, dry it with nitrogen, and finally put it under the condition of 110°C Bake for 1.5 hours to remove moisture.
[0054] The lower cladding of the polymer waveguide was prepared by spin-coating: the polymer material PMMA was spin-coated on the cleaned silicon substrate, the spin-coating speed was controlled at 3000 rpm, and then the film was baked at 120°C for 2.5 hours , to obtain a waveguide lower cladding with a thickness of 4 μm.
[0055] The waveguide groove was prepared by standard photolithography and dry etching process: first, a layer of Al mask with a thickness of 100nm was evaporated on the prepared polymer lower cladding layer, and the Al film was spin-coated by spin-coating process. A layer of positive photoresist BP212 with a...
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Abstract
Description
Claims
Application Information
- IPC
- G01K11/00; G02B6/125; G02B6/138
- Inventors
- 王希斌; 牛东海