The invention discloses a temperature-drift-free on-
chip integrated
laser and a preparation method thereof and relates to the technical field of electronic devices. The temperature-drift-free on-chipintegrated
laser comprises a
gain medium, a spot-size converter, an alignment mark, a temperature-drift-free
hybrid integrated optical
waveguide and a temperature-drift-free optical
resonator, whereinthe
gain medium is connected with the temperature-drift-free
hybrid integrated optical
waveguide through the spot-size converter; the temperature-drift-free
hybrid integrated optical
waveguide comprises high-refractive-index material layer formed on a low-refractive-index substrate and a negative-thermo-optical-coeffecient material layer which can compensate for a positive thermo-
optical coefficient of the high-refractive-index material layer; and the temperature-drift-free optical
resonator is of a
resonator structure formed based on the temperature-drift-free hybrid integrated optical waveguide, and is used for stabilizing output wavelengths of the
laser at different temperatures. The problem that an output
wavelength of a
silicon-based on-
chip integrated laser changes with the temperature is solved. An additional regulation and control device does not need to be added, so that the temperature-drift-free on-
chip integrated laser is low in
power consumption, high in integration degree and low in preparation cost.