Thermo-optical modulator based on graphene microring structure and manufacturing method thereof

A technology of thermo-optic modulator and manufacturing method, which is applied in the fields of instruments, optics, nonlinear optics, etc., and can solve problems such as limited application, low yield, and complex process flow

Inactive Publication Date: 2015-11-11
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the structures of such devices are capacitive structures, which have a relatively complicated process and low yield
This defect limits their application in large-scale photonic integrated circuits

Method used

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  • Thermo-optical modulator based on graphene microring structure and manufacturing method thereof
  • Thermo-optical modulator based on graphene microring structure and manufacturing method thereof
  • Thermo-optical modulator based on graphene microring structure and manufacturing method thereof

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Embodiment Construction

[0026] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0027] refer to Figure 4 As shown, the thermo-optic modulator is formed on the silicon-on-insulator substrate 12, the silicon-on-insulator substrate 12 includes a silicon oxide buried oxide layer 1 and a top layer silicon 2 on the silicon oxide buried oxide layer 1, and the top layer silicon 2 is arranged There are a straight waveguide 3 , a ring resonant cavity 4 , a layer of square graphene conductive layer 5 , a first electrode layer 6 , and a second electrode layer 7 . The straight waveguide 3 and the ring resonant cavity 4 are in the same plane, both on the top layer of silicon 2, and there is a small distance between them, about 50-150nm, and there are gratings at both ends of the straight waveguide to couple light into and out of the waveguide ( The grating is not marked in the figure); the graphene conductive layer 5 is loc...

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Abstract

The invention discloses a thermo-optical modulator based on a graphene microring structure. The thermo-optical modulator comprises insulated silicon-on-substrate as a substrate. A straight waveguide and an annular resonant chamber are adjacently arranged on the insulated silicon-on-substrate. A square graphene conducting layer is arranged above the straight waveguide and the annular resonant chamber. A first electrode layer and a second electrode layer without overlapping are arranged above the other end of the graphene conducting layer. According to the thermo-optical modulator, the graphene directly contacts with a silicon microring waveguide. Heat which is generated by the graphene is changed through controlling the voltage which is applied on the graphene, and finally light modulation in the silicon microring is realized. The thermo-optical modulator can be prepared in a relatively easy manner. Furthermore a microring resonant cavity is very sensitive. Furthermore because of a relatively large thermo-optic coefficient of the silicon, strong optical modulation can be realized. Furthermore because of an ultrahigh thermal conductivity of the graphene, dynamic response of the device is improved to a relatively large extent.

Description

technical field [0001] The invention relates to the field of light modulators, in particular to a thermo-optic modulator based on a graphene microring structure and a manufacturing method thereof. Background technique [0002] For an optical modulator, the modulation depth, spectral range and response speed of the optical modulator are important parameters to measure its performance. The spectral range and modulation rate of conventional optical modulators based on group IV and III-V semiconductors (such as silicon and gallium arsenide) are limited by their energy bands and carrier transit times, making it difficult to achieve ultrafast broadband optical The modulator is not suitable for some applications that have stricter requirements on device performance, such as the field of ultra-fast broadband data transmission. On the other hand, with the improvement of device integration requirements, the device size needs to be continuously reduced, and the traditional device size...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
Inventor 鲍桥梁甘胜李绍娟李鹏飞
Owner SUZHOU UNIV
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