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Vertical semiconductor device having body region, a method for fabricating same, and corresponding electronic device

A device and body region technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as difficult to control threshold voltage

Active Publication Date: 2019-08-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, for vertical devices such as nanowire devices, it is difficult to control, especially dynamically control, the threshold voltage, which is important for reducing power consumption

Method used

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  • Vertical semiconductor device having body region, a method for fabricating same, and corresponding electronic device
  • Vertical semiconductor device having body region, a method for fabricating same, and corresponding electronic device
  • Vertical semiconductor device having body region, a method for fabricating same, and corresponding electronic device

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Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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PUM

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Abstract

A vertical semiconductor device having a body region, a method for fabricating the same and an electronic device including the semiconductor device are disclosed. According to an embodiment, the semiconductor device may include a support substrate; an insulating layer disposed on the support substrate; a first source / drain layer, a channel layer, and a second source / drain layer which are successively stacked on the insulating layer; a gate stack formed around the periphery of the channel layer; a body region formed in the first source / drain layer; and a first contact portion to the support substrate.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device with a body region, a manufacturing method thereof, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the area occupied by the horizontal device cannot be further reduced or the manufacturing cost cannot be further reduced. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, compared with horizontal devices, vertical devices are easier to scale down or lower manufacturing costs. Nanowire vertical field effect transistors are one of the candidates for ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/7827H01L29/0684H01L29/66666
Inventor 朱慧珑朱正勇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI