Semiconductor device, manufacturing method thereof and electronic device comprising device

Abstract

The invention relates to a semiconductor device, a manufacturing method thereof and an electronic device comprising the device. According to an embodiment, the semiconductor device may include a substrate, a first source / drain layer, a channel layer, a second source / drain layer and a gate stack, wherein the first source / drain layer, the channel layer and the second source / drain layer are sequentially stacked on the substrate, the channel layer contains a channel region which is adjacent to the peripheral surface of the channel layer and a body region located inside the channel region, and thegate stack is formed around the periphery of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the area occupied by the horizontal device cannot be further reduced or the manufacturing cost cannot be further reduced. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, compared with horizontal devices, vertical devices are easier to scale down or lower manufacturing costs. A nanowire vertical gate-all-around field effect transistor (V-GAAFET, Vertical Gate-all...

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Problems solved by technology

[0003] However, for vertical devices such as nanowire devices, it is difficult to control, especially dynamically control, the threshold voltage, which is important for reducing power consumption

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