Semiconductor device, method of manufacturing same, and electronic apparatus including same

Abstract

The invention discloses a semiconductor device, a method of manufacturing the same, and an electronic apparatus including the same. The semiconductor device may include a substrate, a first source / drain layer, and a channel layer and a second source / drain layer which are sequentially stacked on the substrate in the vertical direction relative to the substrate, a gate stack, a back gate, a back gate dielectric layer and a back gate contact portion, wherein the first source / drain layer comprises a first source / drain region located on the outer side in the transverse direction relative to the substrate and a first body region located on an inner side of the first source / drain region in the transverse direction, the gate stack is formed around at least part of the periphery of the channel layer, the back gate is arranged below the channel layer, in a top view, the back gate, the first body region in the first source / drain region and the channel layer are at least partially overlapped, theback gate dielectric layer is arranged between the first source / drain layer and the back gate, and the back gate contact portion is used for applying a bias to the back gate.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the area occupied by the horizontal device cannot be further reduced or the manufacturing cost cannot be further reduced. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, compared with horizontal devices, vertical devices are easier to scale down or lower manufacturing costs. A nanowire vertical gate-all-around field effect transistor (V-GAAFET, Vertical Gate-all...

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Problems solved by technology

[0003] However, for vertical devices such as nanowire devices, it is difficult to control, especially dynamically control, the threshold voltage, which is important for reducing power consumption

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