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Vertical device with body region, method for manufacturing the same, and corresponding electronic device

A vertical direction, device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as difficult to control threshold voltage

Active Publication Date: 2022-07-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, for vertical devices such as nanowire devices, it is difficult to control, especially dynamically control, the threshold voltage, which is important for reducing power consumption

Method used

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  • Vertical device with body region, method for manufacturing the same, and corresponding electronic device
  • Vertical device with body region, method for manufacturing the same, and corresponding electronic device
  • Vertical device with body region, method for manufacturing the same, and corresponding electronic device

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Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and may vary in practice due to manufacturing tolerances or technical limitations, and those skilled in the art will Regions / layers with differen...

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Abstract

A vertical semiconductor device with a body region, a method of manufacturing the same, and an electronic device including the semiconductor device are disclosed. According to an embodiment, a semiconductor device may include: a supporting substrate; an insulating layer provided on the supporting substrate; a first source / drain layer, a channel layer, and a second source / drain layer disposed on the insulating layer and sequentially stacked; a gate stack formed around the perimeter of the channel layer; a body region formed in the first source / drain layer; and a first contact to the supporting substrate.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device with a body region, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a metal oxide semiconductor field effect transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the area occupied by the horizontal type device cannot be further reduced or the manufacturing cost cannot be further reduced. In contrast, in a vertical type device, the source, gate and drain are arranged in a direction substantially perpendicular to the surface of the substrate. Therefore, the vertical type device is easier to shrink or the manufacturing cost is easier to reduce than the horizontal type device. Nanowire vertical field effect transisto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/7827H01L29/0684H01L29/66666
Inventor 朱慧珑朱正勇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI