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Chamber for patterning non-volatile metals

A technology of processing chamber and moving base, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., and can solve problems such as reliability and performance

Inactive Publication Date: 2019-08-09
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, non-volatile metals are often difficult to pattern using conventional dry plasma etch reactors because they are difficult to form volatile metal by-products
As a result, conventional etch processes often result in redeposition of metal on the surface of the substrate, leading to reliability and performance issues

Method used

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  • Chamber for patterning non-volatile metals
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  • Chamber for patterning non-volatile metals

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Embodiment Construction

[0060] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known method operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with specific embodiments, it should be understood that these specific embodiments are not intended to limit the disclosed embodiments.

[0061] Semiconductor processing involves etching non-volatile metals that are difficult to pattern and etch using conventional dry plasma etch reactors. Exemplary non-volatile metals include copper, cobalt, platinum, palladium, iron, and iridium. Such non-volatile metals can have unique electrical and magnetic properties, and thus can be used in advanced memory and logic applications, such as in ...

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Abstract

The invention provides a chamber for patterning non-volatile metals. Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamberincluding a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses may be suitable for etching non-volatile metals using a treatment while the movable pedestal is in the lowered position and a high pressure exposure to organic vapor while the movable pedestal is in the raised position.

Description

[0001] This application is a divisional application of the invention patent application with the application number 201710061612.5, the application date is January 26, 2017, and the invention title is "a chamber for patterning non-volatile metals". technical field [0002] The present invention relates to the field of semiconductor processing and in particular to chambers for patterning non-volatile metals. Background technique [0003] Semiconductor processing often involves etching non-volatile metals. However, non-volatile metals are often difficult to pattern using conventional dry plasma etch reactors because they are difficult to form volatile metal by-products. As a result, conventional etching processes often result in redeposition of metal on the surface of the substrate, leading to reliability and performance issues. Contents of the invention [0004] Apparatus for processing semiconductor substrates are provided herein. One aspect relates to an apparatus for p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/3213H01L21/67H01L21/687C23C14/50
CPCH01L21/32136H01J37/32715H01L21/32138H01L21/67069H01L21/68735H01L21/68764H01L21/32135C23C14/50H01L21/3065H01L21/31116
Inventor 沈美华黄硕刚索斯藤·利尔西奥·帕纳戈波罗斯
Owner LAM RES CORP