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A method of manufacturing an isolation groove and its application

A manufacturing method and technology for isolation grooves, which are applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult to control the manufacturing process of isolation grooves, the decline in the yield of high-voltage LED chips, and the low manufacturing yield, so as to solve the problems of defective chips, The effect of controlling losses and improving productivity

Active Publication Date: 2020-12-18
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the particularity of its high-voltage product production process and process, its manufacturing yield is low and its consistency is poor
In particular, the manufacturing process of isolation grooves in high-voltage LED chips is difficult to control, resulting in a decline in the yield of high-voltage LED chips

Method used

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  • A method of manufacturing an isolation groove and its application
  • A method of manufacturing an isolation groove and its application
  • A method of manufacturing an isolation groove and its application

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Embodiment Construction

[0033] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...

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Abstract

The invention provides a manufacturing method of an isolation groove and an application thereof. The manufacturing method comprises the following steps: providing a substrate; forming an epitaxial structure on the substrate; forming a patterned photoresist layer on the epitaxial structure through multiple exposures; removing a part of the epitaxial structure to form an isolation groove, wherein the isolation groove exposes the substrate, and the distance between a photomask and the photoresist layer during the second exposure is greater than the distance between the photomask and the photoresist layer during the first exposure during the multiple exposures. According to the invention, the manufacturing method can improve the product yield of a high-voltage light emitting diode chip.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing an isolation groove and an application thereof. Background technique [0002] In recent years, light emitting diodes (Light Emitting Diode, LED for short), as a new generation of green light sources, are widely used in lighting, backlight, display, indication and other fields. The high-voltage LED chip includes at least two sub-chips connected in series, and each sub-chip includes an N-type layer, an active layer and a P-type layer. [0003] The high-voltage LED chip is an integrated light-emitting diode chip composed of multiple low-power LEDs connected in series. It has the advantages of high antistatic ability, high luminous efficiency, and saving wiring costs for packaging factories. Its position in the chip field is gradually emerging. Due to the particularity of the production process and process of its high-voltage products, its manufacturing yield...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20H01L33/38
CPCH01L33/005H01L33/20H01L33/387H01L2933/0016
Inventor 吕振兴李鑫鑫刘亚柱王晓燕齐胜利
Owner 宁波安芯美半导体有限公司