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Multi-Level Gate Control for Transistor Devices

A technology of transistors and devices, applied in the field of multi-level gate control of transistor devices, can solve problems such as unsatisfactory, SOA destruction, and long conversion time

Pending Publication Date: 2019-09-10
DIALOG SEMICON UK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] First, when the transistor device is in reverse conduction mode and reverses V DS At higher voltages, the loss of power dissipation will be high
This is obviously not ideal from an energy saving and efficiency point of view
[0005] Second, when the transistor device is turned on, with a large V DS voltage and the resulting larger device currents can destroy SOA
For example, the long transition time that the circuit takes to turn on the power device can destroy the SOA

Method used

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  • Multi-Level Gate Control for Transistor Devices
  • Multi-Level Gate Control for Transistor Devices
  • Multi-Level Gate Control for Transistor Devices

Examples

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Embodiment Construction

[0047] As described above, the same or similar reference numerals in the present invention denote the same or similar elements, and repeated description thereof may be omitted for the sake of brevity.

[0048] figure 1 An example of a circuit 100 for operating (eg, driving) a transistor device 10 is shown. The transistor device 10 may be used as a switch (transistor switch). For example, transistor device 10 may act as a power switch. Furthermore, the transistor device may be, for example, a GaN transistor or a MOS transistor. For example, transistor device 10 may be a GaN HEMT. The circuit 100 includes a transistor device 10 and a control circuit 20 coupled to the gate (gate terminal) of the transistor device 10 . By applying a voltage level to the gate of transistor device 10, control circuit 20 can control the gate-source voltage V between the gate of transistor device 10 and the source (source terminal) of transistor device 10 GS . Therefore, the control circuit 20 m...

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Abstract

A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The controlcircuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch.

Description

technical field [0001] The present invention relates to a circuit for operating a transistor device acting as a switch and a method of operating a transistor device acting as a switch. The invention is particularly applicable to gallium nitride (GaN) transistor devices, such as GaN high electron mobility transistors (HEMTs). Background technique [0002] Conventionally, two gate voltage levels are used to operate (drive) the power switch, ie a low level is OFF and a high level is ON. For many transistor devices that can be used as power switches, there is a parasitic body diode that allows a PN reverse conduction mode (RCM) when the device is turned off by gate control. Depending on the transistor device, there may also be a reverse conduction mode available. This mode can be overridden by a PN conduction mode. [0003] For GaN transistor devices, there is usually no body diode. However, GaN HEMTs have a reverse conduction mode. Furthermore, the safe operating area (SOA...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05B19/02H03K17/51
CPCG05B19/02H03K17/51H03K17/145H03K17/08122H03K2217/0036H03K17/063H01L29/778H03K17/687H03K3/57
Inventor 霍斯特·克内德根克里斯托夫·N·纳格尔里波莎·吉拉卡弗朗克·克罗米勒安布里什·巴塔德
Owner DIALOG SEMICON UK