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A surface gold thin film patterning method based on semiconductor multi-step depth etching
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A thin-film graphics and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulty, poor effect, and low removal efficiency of gold film, so as to enhance bonding force, reduce process steps, enrich The effect of process route design
Active Publication Date: 2021-04-27
NAT INST CORP OF ADDITIVE MFG XIAN
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[0006] In order to solve the problems of low removal efficiency, difficulty and poor effect of removing the gold film on the etched structure in the prior art, the present invention proposes a new process method, which adopts the method of preferentially depositing a gold film and completing the patterning of the gold film, Then use the patterned gold film as a photolithographic masking layer material to complete the etching molding with multiple step depths to realize the preparation of the excellent pattern structure of the gold film on the multi-step depth substrate, thereby ensuring good product quality
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Embodiment 1
[0062] This example can be found in Figure 4 , including the following steps:
[0063] S1. Siliconwafer cleaning: the silicon wafer is cleaned with SPM, RCA-1, RCA-2 (standard cleaning fluids with different proportions) standard cleaning fluids respectively. The parts to be etched are named as the first step, the second step, ... the Nth step according to the etching depth from large to small.
[0064] S2, gold film deposition, use the deposited gold film as the Nth masking layer, wherein the Nth masking layer corresponds to the Nth step, that is, the masking layer when etching the Nth step pattern part of the silicon wafer structure is the Nth layer masking layer;
[0065] A gold film is deposited on the silicon wafer surface after step S1 cleaning; the present embodiment utilizes the magnetron sputtering method to deposit a 200nm thick gold film on the silicon wafer surface, but the adhesion between the gold film and the silicon wafer is poor, so it is necessary to Depo...
Embodiment 2
[0098] This embodiment is described by etching three structures with different depths as an example, see Figure 5 , through the following process.
[0099] Step 1, silicon wafer cleaning;
[0100] Clean with SPM, RCA-1, RCA-2 standard cleaning solution respectively.
[0101] Step 2, gold film deposition;
[0102] A gold film with a thickness of 200nm is deposited on the surface of a silicon wafer by magnetron sputtering, but the adhesion between the gold film and the silicon wafer is poor, so a nickel film with a thickness of 30-50nm must be deposited on the silicon wafer as an adhesion layer , followed by deposition of gold film, in order to obtain good quality gold film. The gold film is used as the masking layer corresponding to the minimum etching depth.
[0104] Spin-coat a layer of photoresist on the surface of the gold film, the photoresist type is AZ4620, then place the silicon wafer on a 95°C hot plate for soft baking, an...
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Abstract
The invention belongs to the technical field of semiconductors, and in particular relates to a method for patterning a gold thin film on a surface based on semiconductor multi-step depth etching. It solves the problems of low removal efficiency, difficulty and poor effect of removing the gold film on the etched structure in the prior art, and adopts the method of depositing the gold film first and completing the patterning of the gold film, and then using the patterned gold film as a A photolithographic masking layer material, complete the multi-step depth etching molding, in order to realize the preparation of excellent pattern structure of the gold thin film on the multi-step depth substrate, thereby ensuring good product quality, enriching the process path design of the gold thin film patterning, It expands the application field of complex gold thin film patterning.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for patterning a gold thin film on a surface based on semiconductor multi-step depth etching. Background technique [0002] With the advancement of large-scale integrated circuit technology, its processing capacity is no longer limited to the surface of the siliconwafer, but has begun to expand to the depth of the siliconwafer. In today's semiconductor applications, there are more and more devices that need to use deep trench structures to achieve functions. [0003] The multi-step deep etching of silicon substrate requires the design and realization of multi-level and different photolithographic masking layers with gradually increasing complexity from the surface to the internal graphic structure. Multiple photolithography techniques are used to repeatedly form patterns, and multi-level and various photolithographic masks are required. There is no ...
Claims
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