Unlock instant, AI-driven research and patent intelligence for your innovation.

Cutting method and device of MiniLED wafer

A technology of cutting device and cutting method, which is applied in the field of material processing, can solve problems such as low processing efficiency, inability to control oblique crack angles well, and inability to meet processing requirements, so as to achieve the effect of improving efficiency

Active Publication Date: 2019-09-17
深圳市大族半导体装备科技有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a cutting method for Mini LED wafers to solve the technical problems that the current cutting method cannot control the oblique crack angle well, and the processing efficiency is low and cannot meet the processing requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cutting method and device of MiniLED wafer
  • Cutting method and device of MiniLED wafer
  • Cutting method and device of MiniLED wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] When the laser passes through the optical functional device 1 (as attached figure 1 ), by changing the light transmission characteristics, when the laser light enters the objective lens, N focal points (N≥2) are generated in the transmission direction of the optical axis.

[0051] When the laser passes through the optical function device 2 (as attached figure 1 ), by changing the light transmission characteristics, when the laser light enters the objective lens, M N focal points (M≥2, N≥2) are generated in the transmission direction perpendicular to the optical axis.

[0052] Therefore, when the laser light is transmitted through the optical functional devices 1 and 2, the necessary conditions for the MDC cutting method are produced.

[0053] In particular, optical functional devices 1 and 2 can be functionally divided, and can also be as attached figure 1 As mentioned in , combining the functions of the two optical functional devices, such as the optical functional d...

Embodiment 2

[0055] When the light passes through optical functional devices 1 and 2 (or optical functional device 3), the transmission of the light beam is M beam transmission, and the angle is divergent, which depends on the parameter characteristics of optical functional device 2 or optical functional device 3, as attached figure 1 state transfer.

[0056] Lens1 and Lens2 used in the drawings are two identical biconvex mirrors or plano-convex mirrors, forming a 4f optical system. There are strict restrictions on the distance between them, the distance is the focal length f of the convex mirror, as shown in the attached figure 2 shown.

[0057] When the light with a certain divergence angle passes through Lens2, the light becomes parallel transmission state; after the light passes through Lens1, it is transmitted at a contracted angle, and correspondingly, the divergence angle of light is equal to the contraction angle.

[0058] The distance requirements of this optical path transmiss...

Embodiment 3

[0060] In order for MDC to meet the normal processing requirements, it is necessary to adjust the line spacing of the M beams of light. The adjustment method is to adjust the width of the line spacing by rotating the angle of the optical functional device 2 (or optical functional device 3), and finally process the Mini LED. , M (horizontal and parallel to the cutting direction)*N (vertical and perpendicular to the cutting direction) focal points can be generated in the three-dimensional space for processing, as shown in the attached image 3 shown.

[0061] Figure 4 It is a schematic diagram of the cutting section of cutting the sapphire substrate, A1 is the whole sapphire substrate, and A11 is the cutting section therein.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to View More

Abstract

The invention mainly discloses a cutting method and device of a MiniLED. The cutting method comprises the following steps that a laser beam is emitted, and the laser beam is subject to adjustment processing; the laser beam subjected to the adjustment processing is subjected to first-time light transmission characteristic change processing, and N focal points are generated in the optical axis transmission direction of the laser beam, wherein N is greater than or equal to 2; the laser beam subjected to the first-time light transmission characteristic change processing is subjected to second-time light transmission characteristic change processing, M groups of light beams are generated in the direction perpendicular to the optical axis transmission direction of the laser beam, and N focal points are arranged in the optical axis transmission direction of each group of light beams, wherein M is larger than or equal to 2; the M groups of light beams are transmitted through an optical path, so that the substrate material is subjected to cutting treatment; and a matched device is designed. According to the cutting method of the MiniLED wafer, on one hand, the distances among the focal points are designed to match with the thickness of a modified layer, so that the inclined fissure angle is well controlled; and on the other hand, a multi-focal-point three-dimensional cutting mode is adopted, the plurality of wafers can be cut at one time, so that the efficiency is greatly improved.

Description

technical field [0001] The invention belongs to the field of material processing, and in particular relates to a method for cutting Mini LED wafers and a device for cutting Mini LED wafers. Background technique [0002] With the development of the LED industry, the processing technology of each section is becoming more and more mature, the competition is becoming more and more fierce, and the application occasions are becoming more and more extensive. Especially in the display industry, the requirements for display effects are getting higher and higher, which requires new requirements for the angle of light emitted by a single LED wafer; and the requirements for resolution are also getting higher and higher, which requires reducing the The size of a single LED light-emitting wafer. [0003] Compared with OLED, Mini LED display has the advantages of lower cost, more saturated display effect than OLED, 3-5 times higher brightness than OLED, 3-5 times longer life than OLED, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/067B23K26/38B23K26/402
CPCB23K26/38B23K26/067B23K26/402
Inventor 李忠乾辛焕寅周黎明张红江黄浩盛存国陈红尹建刚高云峰
Owner 深圳市大族半导体装备科技有限公司