Cleaning method of substrate
A substrate substrate, plasma cleaning technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of difficult cleaning, difficult removal of dirty impurities, easy parking of dirty impurities or hidden in slits or Low-lying places and other problems, to achieve good cleaning effect
Active Publication Date: 2019-09-20
TRULY SEMICON
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Problems solved by technology
[0003] In the prior art, the cleaning process of the substrate generally includes methods such as brush cleaning, plasma cleaning (or UV cleaning), ultrasonic cleaning, and detergent cleaning. Due to the fragility of micropatterns or components, the direct cleaning of the brush Methods are rarely used, and plasma cleaning (or UV cleaning), ultrasonic cleaning and detergent cleaning are more commonly used, which makes it difficult to remove some stubborn particles, fibers and other dirty impurities on the substrate, especially When the surface of the base substrate has complex patterns or uneven topography (such as FET circuit patterns, TFT diffuse reflection patterns, TFT substrates after rubbing orientation, EPD hemispherical front plate patterns, etc.), dirt Impurities are easy to stay or hide in slits or low-lying places, and are more difficult to be cleaned
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[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0030] Such as figure 1 Shown, a kind of substrate substrate cleaning method, the steps are as follows:
[0031] S101: forming a peeling film layer on the base substrate, the peeling film layer can be combined with the dirty impurities on the base substrate;
[0032] In this step S101, the base substrate may be a bare substrate without any circuit patterns or other functional patterns on the surface, or a functional substrate with circuit patterns or other functional patterns fabricated thereon.
[0033] After the peeling film layer is covered on the surface of the base substrate, it can be physically and / or chemically combined with dirty impurities, wherein the binding force between the peeling film layer and the dirty impurities is greater than that of the dirty impurities Adhesion on the substrate substrate.
[0034] In one embodiment, the peeli...
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The invention discloses a cleaning method of a substrate. The cleaning method of the substrate comprises the following steps of forming a stripping film layer on the substrate, wherein the stripping film layer can be combined with smudgy impurity on the substrate; removing the stripping film layer and the smudgy impurity combined with the stripping film layer from the substrate; and cleaning the substrate. The cleaning method has a relatively good cleaning effect on a pollutant which is difficult to remove by a conventional cleaning method.
Description
technical field [0001] The invention relates to a method for cleaning a base substrate. Background technique [0002] In the field of semiconductor and microelectronics, it is necessary to make complex circuit patterns or other functional patterns on the substrate, which involves the cleaning process of the substrate. [0003] In the prior art, the cleaning process of the substrate generally includes methods such as brush cleaning, plasma cleaning (or UV cleaning), ultrasonic cleaning, and detergent cleaning. Due to the fragility of micropatterns or components, the direct cleaning of the brush Methods are rarely used, and plasma cleaning (or UV cleaning), ultrasonic cleaning and detergent cleaning are more commonly used, which makes it difficult to remove some stubborn particles, fibers and other dirty impurities on the substrate, especially When the surface of the base substrate has complex patterns or uneven topography (such as FET circuit patterns, TFT diffuse reflection...
Claims
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IPC IPC(8): H01L21/02H01L21/311H01L21/3213
CPCH01L21/02057H01L21/31133H01L21/32134
Inventor 罗志猛赵云张为苍
Owner TRULY SEMICON