A method of manufacturing a display panel
A manufacturing method and display panel technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as damage and reduce device conductivity, and achieve the effects of avoiding damage and improving conductivity
Active Publication Date: 2021-04-02
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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However, since the above-mentioned etching process is performed on the surface of the oxide semiconductor layer 13, it is easy to cause damage to the upper surface of the oxide semiconductor layer 13, thereby reducing the conductivity of the device.
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[0021] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar units are denoted by the same reference numerals.
[0022] The insulating layer 14' of the existing display panel contains Si element, and Si tends to remain on the upper surface of the oxide semiconductor layer 13, resulting in the introduction of too many impurities, which reduces the electron concentration of the channel.
[0023] The manufacturing method of the display panel of the present invention comprises the ...
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Abstract
The present invention provides a method for manufacturing a display panel. The method includes: sequentially manufacturing a buffer layer and an oxide semiconductor layer on a base substrate; manufacturing a photoresist layer on the oxide semiconductor layer, and making a photoresist layer on the photoresist layer Performing patterning treatment, removing the photoresist layer corresponding to the gate defined region to obtain a photoresist portion; forming a first metal layer on the photoresist portion and the oxide semiconductor layer not covered by the photoresist portion; The photoresist part is peeled off, so as to peel off the first metal layer located on the photoresist part, so that the first metal layer corresponding to the gate defining region remains, and a gate is obtained. The manufacturing method of the display panel of the present invention can avoid damage to the upper surface of the oxide semiconductor layer and improve the conductivity of the device.
Description
【Technical field】 [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a display panel. 【Background technique】 [0002] Thin film transistors (TFTs) with a top gate (Top Gate) structure are widely used in display panels due to the advantages of a self-aligned process. [0003] Such as figure 1 As shown, the current TFT manufacturing process is to sequentially fabricate a buffer layer 12, an oxide semiconductor layer 13, an insulating layer 14', and a metal layer 15' on a substrate 11, and then use a photoresist 21 to block the gate area, and then The insulating layer 14 ′ and the metal layer 15 ′ that are not covered by the photoresist 21 are etched away by using a dry-wet combination method, so as to form a final gate insulating layer and a gate pattern. However, since the above etching process is performed on the surface of the oxide semiconductor layer 13, it is easy to cause damage to the upper surface of the oxid...
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IPC IPC(8): H01L21/44H01L21/34
CPCH01L29/401H01L29/66969H01L29/7869H01L27/1225H01L21/12H01L21/4763H01L29/66742
Inventor 郑介鑫
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD