Preparation of crucible for silicon carbide by pvt method and method for adjusting temperature field of crucible

Abstract

The invention provides a crucible for preparing silicon carbide by a PVT method, and belongs to the technical field of crystal growth. The crucible comprises a bottom plate, a top cover, and at least two barrels, wherein the at least two barrels are arranged coaxially and arranged in sequence from bottom to top; every two adjacent barrels are detachably connected; the at least two barrels are assembled into a crucible cylinder; the resistivity of the at least two barrels is not identical; the lowermost barrel is detachably connected with the bottom plate, and the uppermost barrel is detachably connected with the top cover; various barrels are separately a graphite barrel; the bottom plate, the crucible cylinder and the top cover enclose to form a reaction chamber; when any barrel is replaced with another barrel with resistivity different from the barrel, the temperature in the reaction chamber and the corresponding area of the barrel changes accordingly. The invention also provides a method for adjusting the temperature field of the crucible. According to the crucible for preparing the silicon carbide by the PVT method and the method for adjusting the temperature field of the crucible, the rapid and easy directional adjustment of the temperature field is realized.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and more specifically relates to a crucible for preparing silicon carbide by a PVT method and a method for adjusting the temperature field of the crucible. Background technique [0002] Silicon carbide (SiC) is a compound semiconductor material based on silicon and carbon, which stands out for its wide bandgap technology and is a typical representative of the third-generation semiconductor material. At present, the silicon carbide powder or single crystal substrate material used to make devices is mainly grown by PVT (Physical Vapor Transport) method, and the performance of the growth equipment directly determines the quality of the SiC powder synthesized based on this equipment or the growth rate. SiC single crystal quality, graphite crucible is the main heat source of the equipment, and its thermal efficiency and heat distribution directly affect the realization of the highest temperatur...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a PVT method for preparing a crucible for silicon carbide and a method for adjusting the temperature field of the crucible, aiming to solve the technical problem that the current method for adjusting the temperature field of the crucible cannot be adjusted quickly, easily, and directional.

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