Unlock instant, AI-driven research and patent intelligence for your innovation.

Epitaxy substrate

A technology of epitaxial substrates and substrates, applied in semiconductor devices, electrical components, circuits, etc., can solve defects and other problems, achieve the effect of reducing wafer edge defects and improving component yield

Active Publication Date: 2019-10-18
GLOBALWAFERS CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides an epitaxial substrate, which can improve the problem that defects are easily generated at the edge of the wafer during wafer epitaxy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxy substrate
  • Epitaxy substrate
  • Epitaxy substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Exemplary embodiments of the present invention will be fully described below with reference to the accompanying drawings, but the invention may also be embodied in many different forms and should not be construed as being limited to the embodiments described herein. In the drawings, for the sake of clarity, the sizes and thicknesses of regions, parts and layers may not be drawn in actual scale. In order to facilitate understanding, the same elements in the following description will be described with the same symbols.

[0043] figure 1 It is a schematic half-side cross-sectional view of an epitaxial substrate according to the first embodiment of the present invention.

[0044] Please refer to figure 1 , the epitaxial substrate of the first embodiment includes a substrate structure 100 . The substrate structure 100 has an upper portion 102 and a lower portion 104 , and only half of the epitaxial substrate is shown in the figure for clarity, and it should be known that...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

An epitaxy substrate is provided. The epitaxy substrate includes a substrate structure. The substrate structure has an upper part and a lower part, wherein the upper part has a first side which is parallel to the thickness direction of the substrate structure, and the lower part has a second side which is parallel to the thickness direction of the substrate structure. There is a distance between the first side and the second side, and the distance is between 0.1-3 mm.

Description

technical field [0001] The invention relates to a substrate, in particular to an epitaxial substrate. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD) is currently a method for performing an epitaxy process on a wafer. During MOCVD, a wafer is placed on a substrate. The desired crystal growth is obtained by controlling process parameters such as temperature, pressure and gas flow rate in the chamber. [0003] However, in the MOCVD process, due to the rapid rotation of the wafer, it is easy to cause the edge of the wafer to touch the wall of the carrier, and then the collision and extrusion will cause problems such as cracks and slip lines. Such defects can affect subsequently formed devices, resulting in poor device yield. [0004] Therefore, how to reduce the edge defects of the wafer to improve the device yield is one of the problems to be solved urgently. Contents of the invention [0005] The invention provides an epitaxial substrate, w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/06
CPCH01L29/0657
Inventor 范俊一庄志远施英汝
Owner GLOBALWAFERS CO LTD