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Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof

A metal-oxygen semi-field and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing the reaction speed of components

Inactive Publication Date: 2019-10-29
UPI SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there will be parasitic capacitance between the upper electrode of the trench and the adjacent doped region, which will reduce the response speed of the device

Method used

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  • Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof
  • Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof
  • Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof

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Embodiment Construction

[0021] The invention provides a trench type gate metal oxide semiconductor field effect transistor, which adjusts the shape of the upper electrode in the trench and changes the effective area of ​​the parasitic capacitance generated by the side wall of the upper electrode to reduce the parasitic capacitance between the gate and the source capacitance and improve device performance.

[0022] figure 1 and figure 2 It is a partial three-dimensional schematic diagram of a trench gate metal-oxide-semiconductor field-effect transistor according to some embodiments of the present invention. image 3 for along figure 1 The cross-sectional schematic diagram shown by the I-I line. Figure 4 and Figure 5 It is a simplified top view of a trench gate MOSFET according to some embodiments of the present invention.

[0023] Please refer to Figure 1 to Figure 5 , a trench gate MOSFET 10 includes a substrate 100 and a trench electrode structure TS. In one embodiment, the substrate 100...

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Abstract

The invention provides a trench gate metal oxide semiconductor field effect transistor and a manufacturing method thereof. The transistor includes a substrate and a trench electrode structure; the substrate has a trench, and the trench extends in a first direction; the trench electrode structure is configured in the trench and includes a lower part electrode, an upper part electrode and a first insulating layer; the lower part electrode is configured in the trench; the upper part electrode is configured in the trench and located on the lower part electrode; the first insulating layer is configured between the lower part electrode and the upper part electrode; and the upper part electrode has multiple first parts and multiple second parts which are in alternative arrangement in the first direction, and the widths of the first parts are greater than that of the second parts.

Description

technical field [0001] The invention relates to a method for manufacturing a transistor, in particular to a trench type gate metal oxide half field effect transistor and a method for manufacturing the same. Background technique [0002] Power switch transistors have been widely used in the field of power management. An ideal power switch must have the characteristics of low parasitic capacitance to ensure the response speed of the power switch transistor and provide good power conversion efficiency. [0003] Generally, a conventional trench-gate MOSFET has a lower electrode and an upper electrode in the trench, and the lower electrode serves as a shielding gate. However, a parasitic capacitance will be generated between the upper electrode of the trench and the adjacent doped region, which will reduce the response speed of the device. Therefore, how to stably manufacture a power switching transistor with low gate-source parasitic capacitance without increasing the process c...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L29/78H01L21/336
CPCH01L29/4236H01L29/66477H01L29/78
Inventor 陈劲甫
Owner UPI SEMICON CORP