Longitudinal floating field plate device with deep buried layer and manufacturing method
A technology of floating and field plates, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as limiting the use of RUSURF technology
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Embodiment 1
[0042] A kind of vertical floating field plate device with deep buried layer described in embodiment 1, such as figure 1 and figure 2 shown, including:
[0043] Including: deep buried layer 01, first conductivity type semiconductor substrate 11, first conductivity type well region 12, first conductivity type semiconductor contact region 13, second conductivity type drift region 21, second conductivity type well region 22, Second conductivity type semiconductor contact region 23, first dielectric oxide layer 31, second dielectric oxide layer 32, third dielectric oxide layer 33, floating field plate polysilicon electrode 41, control gate polysilicon electrode 42, metal strip 51;
[0044] Wherein, the drift region 21 of the second conductivity type is located above the semiconductor substrate 11 of the first conductivity type, the well region 12 of the first conductivity type is located on the left side of the drift region 21 of the second conductivity type, and the well region...
Embodiment 2
[0071] Such as image 3 As shown, it is a structural diagram of a vertical floating field plate device with a deep buried layer in Embodiment 2. The difference between this example and Embodiment 1 is that the depth of the vertical floating field plate is increased, and the first In the conductive type semiconductor substrate 11 , the buried layer 01 is a second conductive type semiconductor material, and its working principle is basically the same as that of the first embodiment.
Embodiment 3
[0073] Such as Figure 4 As shown, it is a structural diagram of a vertical floating field plate device with a deep buried layer in Embodiment 3. The difference between this embodiment and Embodiment 1 is that the deep buried layer 01 uses slots after grooves It is obtained by implantation without push junction, and what is formed is an independent buried layer surrounding the bottom of each vertical floating field plate, and its working principle is basically the same as that of Embodiment 1.
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Abstract
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