Ultra-high-vacuum ultra-low-temperature in-situ multi-probe transport measurement system

Abstract

The invention discloses an ultra-high-vacuum ultra-low-temperature in-situ multi-probe transport measurement system, which comprises a rapid sample injection chamber, a growth chamber, a transport test chamber, a vacuum interconnection system, a system support and a power system, wherein the rapid sample injection chamber is mainly used for realizing rapid transfer of samples and probe tips between the atmosphere and an ultra-high vacuum environment; the growth chamber mainly realizes growth of specified-pattern thin film devices and electrodes at high temperature; the transport test chamber mainly realizes in-situ multi-probe transport measurement of the grown thin film devices at extremely-low temperature; and the vacuum interconnection system mainly realizes vacuum connection between the system and other systems. The ultra-high-vacuum ultra-low-temperature in-situ multi-probe transport measurement system can control the sample temperature from low temperature to room temperature through the vacuum environment and refrigeration technology.

Description

technical field [0001] The invention belongs to the technical field of thin film sample growth, and in particular relates to an in-situ multi-probe transport measurement system at ultra-high vacuum and extremely low temperature. Background technique [0002] The in-situ multi-probe transport measurement system is mainly used for the growth of thin film devices and electrodes and the in-situ electrical transport measurement of devices. The principle is to use a vacuum piezoelectric ceramic motor to control the movement of the mask plate in the growth chamber and cooperate with the evaporation source to grow samples and electrodes with a specified pattern, and use an independent probe in the transport measurement chamber to form contact with the electrode of the thin film device, through the external circuit Conduct electrical transport measurements. [0003] However, most of the existing technologies cannot realize the growth of thin film devices at high temperature and the ...

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Problems solved by technology

[0003] However, most of the existing technologies cannot realize the growth of thin film devices at high temperature and the in-situ transport test of thin film devices at low temperature, so as to explore important physical properties such as thin film superconductivity, magnetism, and metal-insulator transition from the perspective of transport properties. Therefore, further improvement

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