Pressure control device and semiconductor equipment

Abstract

The invention discloses a pressure control device and semiconductor equipment. A reaction chamber is connected with a vacuum generator. The pressure control device comprises a pressure sensor used formeasuring the pressure P of the reaction chamber in real time, an electric control pressure regulating valve which is connected with a compressed air inlet end of the vacuum generator and used for regulating the air exhaust pressure of a negative pressure opening end of the vacuum generator, an opening degree regulating mechanism which is arranged on a pipeline for connecting the reaction chamberwith the negative pressure opening end of the vacuum generator and is used for regulating the exhaust flow of the reaction chamber, and a controller, wherein a pressure set value of the electric control pressure regulating valve is regulated according to a difference value between the pressure P and the target pressure P0, so the air exhaust pressure of the negative pressure opening end of the vacuum generator is regulated, the opening degree of the opening degree regulating mechanism is controlled according to the air inlet flow of the reaction chamber, the exhaust flow of the reaction chamber is regulated, and the pressure of the reaction chamber is further controlled. The pressure control device is advantaged in that pressure control can be achieved even when the intake air flow rate of the reaction chamber varies over a large range.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a pressure control device and semiconductor equipment including the pressure control device. Background technique [0002] The temperature, gas flow and pressure of the reaction chamber often affect the quality of the silicon wafer surface process. At present, a relative pressure control method is commonly used to control the pressure of the reaction chamber, that is, the pressure in the reaction chamber is controlled according to the comparison between the pressure in the reaction chamber and the pressure of the surrounding environment. This control method is greatly affected by the fluctuation of the exhaust pressure, and the pressure of the reaction chamber is prone to fluctuations. Some processes require a lower pressure in the reaction chamber, which exceeds the exhaust pressure at the plant service end. [0003] An existing reaction chamber pressure control method u...

AI Technical Summary

Problems solved by technology

When the process gas inlet flow rate changes drastically, the control target cannot be achieved

Therefore, the existing control method is only suitable for occasions where the process gas flow range does not change much, and has limitations.

In addition, even within the controllable flow range, when the gas flow rate changes, the control accuracy of the control valve will fluctuate, and the control accuracy is not high

Images