Method for preparing P-type crystalline silicon battery

Abstract

The invention discloses a method for preparing a P-type crystalline silicon battery to solve the electric leakage of a P-type crystalline silicon back carrier selective structure battery. The method successively includes the following steps: A, etching or polishing the back of a textured P-type crystalline silicon wafer; B, growing a thin oxide layer on the back of the P-type crystalline silicon wafer; C, depositing a polycrystalline silicon layer on the thin oxide layer; D, doping the back of the P-type crystalline silicon wafer with III group elements by ion implantation; E, making the III group element doped surface of the P-type crystalline silicon wafer face up, and processing the P-type crystalline silicon wafer in a first solution in a floating manner, wherein the first solution includes at least one of HF, HNO3, and H2SO4; F, doping the front of the P-type crystalline silicon wafer with phosphorus by ion implantation; G, cleaning the P-type crystalline silicon wafer after ion implantation; H, annealing the P-type crystalline silicon wafer; and I, cleaning the P-type crystalline silicon wafer.

Description

technical field [0001] The invention belongs to the field of solar cells and relates to a preparation method of a P-type crystalline silicon cell. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, the research and development of cost-effective silicon solar cells has become the main research direction of photovoltaic companies in various countries. [0003] Existing crystalline silicon solar cells are mainly single-sided solar cells, that is, only the front ...

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Problems solved by technology

[0006] However, when preparing a carrier-selective structure on the back of a P-type crystalline silicon cell, regardless of in-situ doping or thermal diffusion doping, the doping elements will diffract to the non-doped surface (usually the doped surface) during the doping process. Phosphor surface), so that the positive and negative electrodes o

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