A kind of preparation method of p-type crystalline silicon battery

Abstract

The invention discloses a preparation method of a P-type crystalline silicon battery, which solves the leakage problem of the battery with a carrier-selective structure on the back of the P-type crystalline silicon. It includes the following steps in turn: A. Etching or polishing the back of the P-type crystalline silicon wafer after texturing; B. Growing a thin oxide layer on the back of the P-type crystalline silicon wafer; C. Depositing a thin oxide layer on the thin oxide layer. Polysilicon layer, doped with Group III elements; D. Place the doped side of Group III elements on the P-type crystalline silicon wafer upwards, and put it into the first solution in a floating manner, and the first solution includes HF, HNO 3 、H 2 SO 4 , NaOH, KOH, TMAH, and at least one of ammonia water; E, doping the front side of the P-type crystalline silicon wafer treated with the first solution; F, doping the phosphorus-doped surface of the P-type crystalline silicon wafer upward , placed in the second solution in a floating manner, the second solution includes HF, HNO 3 、H 2 SO 4 At least one of them; G. Put the P-type crystalline silicon wafer treated with the second solution into an alkaline solution for treatment.

Description

technical field [0001] The invention belongs to the field of solar cells and relates to a preparation method of a P-type crystalline silicon cell. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, the research and development of cost-effective silicon solar cells has become the main research direction of photovoltaic companies in various countries. [0003] Existing crystalline silicon solar cells are mainly single-sided solar cells, that is, only the front ...

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Problems solved by technology

[0006] However, when preparing a carrier-selective structure on the back of a P-type crystalline silicon cell, regardless of in-situ doping or thermal diffusion doping, the doping elements will diffract to the non-doped surface (usually the doped surface) during the doping process. Phosphorus surface), so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

At the same time, doping phosphorus by thermal diffusion will also cause phosphorus to diffract to the non-phosphorus doped surface, so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

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