Preparation method of P-type crystalline silicon battery

Abstract

The invention discloses a preparation method of a P-type crystalline silicon battery, and solves the problem of electric leakage of a P-type crystalline silicon back carrier selective structure battery. The method sequentially comprises the following steps of: A, etching or polishing the back surface of a textured P-type crystal silicon wafer; B, growing an oxide thin layer on the back surface ofthe P-type crystal silicon wafer; C, depositing a polycrystalline silicon layer on the oxide thin layer, and doping III-group elements; D, facing the III-group element doped surface on the P-type crystal silicon wafer upwards, placing the P-type crystal silicon wafer in a first solution in a floating mode to be treated, wherein the first solution comprises at least one of HF, HNO3, H2SO4, NaOH, KOH, TMAH and ammonia water; E, performing phosphorus doping on the front surface of the P-type crystal silicon wafer treated by the first solution; F, enabling the phosphorus doped surface of the P-type crystal silicon wafer to face upwards, and putting the P-type crystal silicon wafer into a second solution in a floating manner for treatment, the second solution comprising at least one of HF, HNO3and H2SO4; and G, putting the P-type crystal silicon wafer treated by the second solution into an alkaline solution for treatment.

Description

technical field [0001] The invention belongs to the field of solar cells and relates to a preparation method of a P-type crystalline silicon cell. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, the research and development of cost-effective silicon solar cells has become the main research direction of photovoltaic companies in various countries. [0003] Existing crystalline silicon solar cells are mainly single-sided solar cells, that is, only the front ...

AI Technical Summary

Problems solved by technology

[0006] However, when preparing a carrier-selective structure on the back of a P-type crystalline silicon cell, regardless of in-situ doping or thermal diffusion doping, the doping elements will diffract to the non-doped surface (usually the doped surface) during the doping process. Phosphorus surface), so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

At the same time, doping phosphorus by thermal diffusion will also cause phosphorus to diffract to the non-phosphorus doped surface, so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

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