Method for preparing N-type crystalline silicon battery

Abstract

The invention discloses a method for preparing an N-type crystalline silicon battery to solve the electric leakage of an N-type crystalline silicon back carrier selective structure battery. The methodsuccessively includes the following steps: A, performing a single-sided boron doping process on a textured N-type crystalline silicon wafer; B, making the boron-doped surface of the boron-doped N-type crystalline silicon wafer face up and processing the N-type crystalline silicon wafer in a first solution in a floating manner; C, growing a thin oxide layer on the other side of the N-type crystalline silicon wafer; D, depositing a polycrystalline silicon layer on the thin oxide layer and doping the thin oxide layer with phosphorus; E, making the phosphorus-doped surface of the N-type crystalline silicon wafer face up, and processing the N-type crystalline silicon wafer in a second solution in a floating manner; F, processing the N-type crystalline silicon wafer processed by the second solution in an alkaline solution; G, removing the phosphosilicate glass and the borosilicate glass on the surface of the N-type crystalline silicon wafer; H, oxidizing the surface of the N-type crystalline silicon wafer; I, depositing a passivation antireflection layer and a passivation layer on the N-type crystalline silicon wafer; and J, performing a metallization process.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a preparation method of an N-type crystalline silicon cell. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, the research and development of cost-effective silicon solar cells has become the main research direction of photovoltaic companies in various countries. [0003] The silicon wafer substrates used in existing silicon solar cells mainly include two types of silico...

AI Technical Summary

Problems solved by technology

[0006] However, when fabricating a carrier-selective structure on the back of an N-type crystalline silicon cell, no matter whether in-situ doping or thermal diffusion doping is used, the doping elements will diffract to the non-doped surface (usually the doped surface) during the doping process. Phosphorus surface), so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

At the same time, doping phosphorus by thermal diffusion will also cause phosphorus to diffract to the non-phosphorus doped surface, so that the positive and negative electrodes of the battery are directly connected together without insulation, resulting in leakage

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