(100) crystal-oriented diamond n-channel junction field-effect transistor and preparation method thereof
A technology of field effect transistors and diamonds, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low hole mobility of transistors, solve the problem of poor ohmic contact characteristics, improve frequency characteristics, and reduce specific contact The effect of resistivity
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[0031] The invention provides a method for preparing a (100) crystal-oriented diamond n-channel junction field-effect transistor, comprising the following steps:
[0032] Step 1. A layer of n-type diamond layer 2 is grown on the (100) crystal orientation intrinsic single crystal diamond substrate 1 by microwave plasma chemical vapor deposition method, and after grinding and polishing, the surface roughness is less than 2nm;
[0033] Step 2, preparing a metal mask 3 on the surface of the n-type diamond layer 2, and etching two grooves in the n-type diamond layer 2 by using an etching technique;
[0034] Step 3, using a microwave plasma chemical vapor deposition method to grow a layer of n-type diamond thin layer 4 on the surface of the groove;
[0035] Step 4: Heat the sample at over 200°C with a 1:1 mixture of sulfuric acid and nitric acid, remove the metal mask 3, and oxidize the hydrogen terminal on the surface of the n-type diamond thin layer 4 into an oxygen terminal, and ...
Embodiment 1
[0049] Such as figure 1 , (100) oriented n-type diamond junction field effect transistor, intrinsic single crystal diamond substrate 1 is high temperature and high pressure synthetic single crystal diamond, the size is 3×3×0.3mm 3 . The n-type diamond layer 2 with a thickness of 20 μm was epitaxially grown on the surface of the substrate by microwave plasma chemical vapor deposition method. The growth conditions were: gas pressure 100 Torr, gas flow rate 500 sccm, 4 / H 2 = 0.05%, PH 3 / CH 4 =2000ppm, substrate temperature is 950℃, doping concentration is 10 17 cm -3 . After the growth is finished, use a grinding and polishing machine to thin the n-type diamond layer 2 to 2 μm, with a surface roughness of 1 nm.
[0050] A 200nm titanium metal mask 3 is prepared on the n-type diamond layer 2 by photolithography, magnetron sputtering and lift-off processes, and then a 1.5 μm deep groove is etched by inductively coupled plasma etching technology, such as figure 2 shown. ...
Embodiment 2
[0056] Such as figure 1 , (100) oriented n-type diamond junction field effect transistor, intrinsic single crystal diamond substrate 1 is high temperature and high pressure synthetic single crystal diamond, the size is 3×3×0.3mm 3 . The n-type diamond layer 2 with a thickness of 20 μm was epitaxially grown on the surface of the substrate by microwave plasma chemical vapor deposition method. The growth conditions were: gas pressure 100 Torr, gas flow rate 500 sccm, 4 / H 2 = 0.005%, pH 3 / CH 4 =2000ppm, substrate temperature is 950℃, doping concentration is 10 16 cm -3 . After the growth is completed, the n-type diamond layer 2 is thinned to 5 μm with a surface roughness of 1 nm by using a grinding and polishing machine.
[0057] Prepare a 500nm titanium metal mask 3 on the n-type diamond layer 2 by photolithography, magnetron sputtering and lift-off processes, and then use inductively coupled plasma etching technology to etch a 4 μm deep groove, such as figure 2 shown...
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Abstract
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