A kind of preparation method of graphene ceramic circuit substrate
A circuit substrate, graphene technology, applied in vacuum evaporation plating, coating, sputtering plating and other directions, to achieve the effect of solving the yield
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[0037] A kind of preparation method of graphene ceramic circuit board of the present invention comprises the following steps:
[0038] S1, (alumina, aluminum nitride, zirconia, etc.) before substrate 1 is sprayed, the substrate is first degreased and dried with 40g / L acetone degreaser; Clean with weak acid salt, decontaminate and activate the surface, the temperature is 19-30°C, and the time is 20-50Sec;
[0039] S2. Polish the cleaned substrate on a grinder until the plane finish is Ra<0.008um. After the polishing is completed, use the S1 method to clean it. After cleaning, dry it in an oven at 100-120°C for 10-30 minutes;
[0040] S3. Place the polished substrate in the coating chamber, turn on the vacuum pump to evacuate to 0.1-0.01pa, heat the polished substrate to 550-650°C and perform ion bombardment. The ion bombardment voltage is 200V-1kV negative high voltage, and the time is 10-40min. Then adjust The current is 30-60A to pre-melt the nickel plating material and dega...
Embodiment 1
[0045] A kind of preparation method of graphene ceramic circuit board of the present invention comprises the following steps:
[0046]S1. Before spraying the substrate, first degrease and dry it with 40g / L acetone degreasing agent; then wash it with water at a temperature of 30°C for 1min, and clean it with a weak acid salt to decontaminate and activate the surface at a temperature of 19°C and a time of 20Sec;
[0047] S2. Polish the cleaned substrate on a grinder until the plane finish is Ra<0.008um. After the polishing is completed, use the S1 method to clean it. After cleaning, dry it in an oven at 100°C for 10 minutes;
[0048] S3. Place the polished substrate in the coating chamber, turn on the vacuum pump to evacuate to 0.1pa, heat the polished substrate to 550°C and perform ion bombardment. The ion bombardment voltage is 200V negative high voltage, and the time is 10min. Melt and degas for 1 min. After the pre-melting is completed, adjust the current to 70A for evapora...
Embodiment 2
[0052] A kind of preparation method of graphene ceramic circuit board of the present invention comprises the following steps:
[0053] S1. Before spraying the substrate, first degrease and dry it with 40g / L acetone degreasing agent; then wash it with water at a temperature of 40°C for 4 minutes, clean it with a weak acid salt, decontaminate and activate the surface, the temperature is 22°C, and the time is 30Sec;
[0054] S2. Polish the cleaned substrate on a grinder until the plane finish is Ra<0.008um. After the polishing is completed, use the S1 method to clean it. After cleaning, dry it in an oven at 105°C for 15 minutes;
[0055] S3. Place the polished substrate in the coating chamber, turn on the vacuum pump to evacuate to 0.04pa, heat the polished substrate to 570°C and perform ion bombardment. The ion bombardment voltage is 400V negative high voltage, and the time is 20min. Melt and degas for 1.5min. After the pre-melting is completed, adjust the current to 80A for ev...
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