Semiconductor film and preparation method thereof

A technology for semiconductors and thin films, applied in the field of semiconductor thin films and their preparation, can solve the problems of characteristic decline, the influence of the use of semiconductor thin films, etc., and achieve the effects of improving performance and increasing ion content

Inactive Publication Date: 2020-01-03
苏师大半导体材料与设备研究院(邳州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a semiconductor thin film and its preparation method, which solves the problem that the characteristics of the semiconductor thin film in the prior art will obviously decline after being irradiated by strong light, and the existing preparation method cannot Effectively solve this problem, leading to the problem that the use of semiconductor thin films is seriously affected

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] An embodiment of the present invention provides a semiconductor thin film, which is composed of niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of niobium pentoxide, titanium diboride and chromium oxide is 0.3:0.3:0.4, and the thin film The thickness is 30-40nm.

[0023] SiH by introducing dopant gas 4 、SiF 4 with SiH 2 Ci 4 , so that the semiconductor film contains a small amount of H ions, so that a layer of network structure is formed on the surface of the semiconductor film, so that the characteristics of the semiconductor film will not decline after being irradiated by strong light, and the normal use of the semiconductor film is guaranteed.

[0024] A method for preparing a semiconductor thin film, comprising the steps of:

[0025] S1. Prepare niobium pentoxide, titanium diboride and chromium oxide, mix niobium pentoxide, titanium diboride and chromium oxide evenly, calcinate them, and then granulate, press and sinter in sequen...

Embodiment 2

[0031] An embodiment of the present invention provides a semiconductor thin film, which is composed of niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of niobium pentoxide, titanium diboride and chromium oxide is 0.3:0.3:0.4, and the thin film The thickness is 30-40nm.

[0032] A method for preparing a semiconductor thin film, comprising the steps of:

[0033] S1. Prepare niobium pentoxide, titanium diboride and chromium oxide, mix niobium pentoxide, titanium diboride and chromium oxide evenly, calcinate them, and then granulate, press and sinter in sequence to obtain ceramics target;

[0034] S2. Select a substrate and pretreat it, then send the target and the substrate into the vacuum device, and at the same time feed the rare gas into the vacuum device. When the fed rare gas reaches the preset value, Stop the introduction of rare gas, and form a semiconductor thin film on the substrate by using the glow discharge method;

[0035] S3. Feed...

Embodiment 3

[0038] An embodiment of the present invention provides a semiconductor thin film, which is composed of niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of niobium pentoxide, titanium diboride and chromium oxide is 0.3:0.3:0.4, and the thin film The thickness is 30-40nm.

[0039] A method for preparing a semiconductor thin film, comprising the steps of:

[0040] S1. Prepare niobium pentoxide, titanium diboride and chromium oxide, mix niobium pentoxide, titanium diboride and chromium oxide evenly, calcinate them, and then granulate, press and sinter in sequence to obtain ceramics target;

[0041] S2. Select a substrate and pretreat it, then send the target and the substrate into the vacuum device, and at the same time feed the rare gas into the vacuum device. When the fed rare gas reaches the preset value, Stop the introduction of rare gas, and form a semiconductor thin film on the substrate by using the glow discharge method;

[0042] S3. Feed d...

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Abstract

The invention provides a semiconductor film and a preparation method thereof, and relates to the technical field of semiconductor materials. The semiconductor film comprises niobium pentoxide, titanium diboride and chromium oxide, wherein the molar ratio of the niobium pentoxide, the titanium diboride to the chromium oxide is 0.3: 0.3: 0.4, and the thickness of the film is 30-40nm. The method comprises the steps of: S1, preparing niobium pentoxide, titanium diboride and chromium oxide, uniformly mixing the niobium pentoxide, the titanium diboride and the chromium oxide, calcining, sequentiallygranulating, tabletting and sintering to obtain a ceramic target material. By introducing doping gases of SiH4, SiF4 and SiH2Ci4, the semiconductor film contains a small amount of H ions, so that a layer of network structure is formed on the surface of the semiconductor film, the characteristic of the semiconductor film is not degraded after the semiconductor film is irradiated by strong light, and the normal use of the semiconductor film is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a semiconductor thin film and a preparation method thereof. Background technique [0002] Semiconductors refer to materials whose conductivity is between conductors and insulators at room temperature. Semiconductors are widely used in radios, televisions and temperature measurement. For example, diodes are devices made of semiconductors. A semiconductor refers to a material whose conductivity can be controlled and ranges from an insulator to a conductor. Whether from the perspective of technology or economic development, the importance of semiconductors is very huge. Most of today's electronic products , such as computers, mobile phones or digital recorders, the core units are closely related to semiconductors. Common semiconductor materials include silicon, germanium, gallium arsenide, etc., and silicon is among various semiconductor materials. It is widely used ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C23C14/38C23C14/06C23C14/08C23C14/58H01L21/02
CPCC23C14/067C23C14/083C23C14/34C23C14/3407C23C14/5846H01L21/02631H01L21/02664
Inventor闫一方
Owner苏师大半导体材料与设备研究院(邳州)有限公司