A test and analysis method to determine the failure position of gan cascode devices
A test method and device technology, which is applied in the direction of single semiconductor device test, semiconductor/solid-state device test/measurement, semiconductor working life test, etc., can solve the problems of unpacking test failure, tediousness, and insufficient accuracy
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Embodiment 1
[0029] In order to simplify the test process, omit unnecessary test steps, and determine the specific location of device failure through test results, the present invention proposes a test result analysis comparison table, and the specific test steps and analysis methods are as follows.
[0030] figure 1 The internal equivalent circuit diagram of a common normally-off GaN cascode structure is given, and the components in the circuit are labeled for the convenience of description. The numbers 1-8 represent Si MOSFET gate-source channel, Si MOSFET gate-drain channel, GaNHEMT gate-source channel, GaN HEMT gate-drain channel, GaN HEMT gate, Si MOSFET gate, Si MOSFET body active region, GaNHEMT Bulk unintentionally doped layer.
[0031] The test method proposed by the invention is carried out in the state of device packaging. It is divided into three steps:
[0032] The first step is to measure the gate leakage level Igss of the device;
[0033] The second step is to measure th...
Embodiment 2
[0051] The technical points to be protected in the application of the present invention are: (1) Reliability test scheme of cascode structure device in sealing state (2) Comparison table of cascode test result analysis method in sealing state (3) Judgment criteria of cascode structure failure position and failure cause .
[0052] Specific embodiments of the present invention are as follows:
[0053] Step ①: There are two methods for measuring the gate leakage level Igss of the device. The first method is to short-circuit both ends of the drain and source, and apply a voltage to the gate to measure the leakage. The second method is to short the two ends of the gate and source, and to apply a voltage to the drain to measure the leakage. The final conclusions of the two methods are equivalent.
[0054] Step ②: Measure the leakage level of the device under the low drain voltage, ground the source, apply 0 bias to the gate, and apply a small voltage to the drain at the same time,...
Embodiment 3
[0062] The specific embodiment of the method for testing and analyzing the failure position of the GaN cascode device proposed by the present invention is described as follows:
[0063] Step ①: measure the gate leakage level Igss of the device. For devices that fail after aging, short-circuit the two ends of the gate-source or drain-source of the device and ground them, and apply 1-V to the other end th (Si MOS threshold voltage), a small voltage to measure the current level in the loop.
[0064] Step ②: Measure the leakage level of the device at low drain voltage. Ground the source, apply 0 bias to the gate, and apply a small voltage less than 20V to the drain at the same time, and measure the leakage current of the drain at this time.
[0065] Step ③: Measure the leakage level of the device under high drain voltage. Ground the source, apply 0 bias to the gate, and apply a large voltage of 480-750V to the drain at the same time, and measure the leakage current of the drain...
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