Hollow microstructure of LED and manufacturing method for hollow microstructure
A manufacturing method and microstructure technology, applied in the fields of optics and lasers, can solve problems such as difficulty in continuous improvement and industrial quantification, low cost competitiveness, complex manufacturing process, etc., to improve external quantum efficiency, increase outgoing light intensity and Emitting light efficiency, wide range of effects
Active Publication Date: 2020-02-21
CENT SOUTH UNIV
View PDF8 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Generally, surface roughening can only slightly improve the light extraction efficiency of LEDs, and it is difficult to continuously improve and industrialize it; patterned substrate technology can effectively expand the light output area to improve the external quantum efficiency, but its realization process requires complex multi-step semiconductor manufacturing process, and requires expensive precision photolithography mask; flip-chip technology effectively avoids the influence of luminous efficiency due to the occupation of the light-emitting area by the electrode in the front-mounted chip, so that the light excited by the light-emitting layer is directly emitted from the other side of the electrode, but the inverted Chip-mounting technology has subverted the traditional LED process. From the chip to the packaging process, the equipment requirements are higher. In the application of small and medium-power LEDs, the cost competitiveness is not very strong; the surface microstructure technology continues to improve with the continuous improvement of the surface structure manufacturing process level. To improve, researchers began to explore the process of processing micro-nano structure arrays on the surface of LEDs, using the waveguide characteristics of the arrays to improve the external quantum efficiency of LEDs. At the same time, this method can avoid damage to LED chips because it is mainly realized by external manufacturing processes. , and does not need to change the original manufacturing process of the LED, it has received more and more attention, but the surface microstructure technology will inhibit the light emission within the total reflection light cone
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0035] The invention discloses a method for manufacturing a hollow microstructure of an LED, which comprises the following steps:
[0036] S1. Place and fix an LED 13 to be processed on the three-dimensional platform 14, select a suitable optical element, build an optical path system, and align the objective lens with the LED 13 to be processed;
[0037] S2. Adjust the observation optical path and combine the movement of the three-dimensional platform 14 to position the focal point of the femtosecond laser to the target position on the surface or inside of the LED 13 to be processed;
[0038] S3. Control the movement of the three-dimensional platform 14 and the on-off coo...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| wavelength | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to the technical field of optics and lasers, and discloses a hollow microstructure of an LED. The hollow structure comprises a hollow area and a microstructure area positioned onthe LED, wherein the microstructure area is distributed all over microstructure arrays which surround the hollow area without any microstructure array, and the hollow area is positioned above an LEDlight emitting source and overlaps with the cross section of a total reflection light cone at the height of the microstructure arrays; the invention further discloses a manufacturing method for the hollow microstructure of the LED and an optical path system adopted by the manufacturing method, and the structure can improve the light emitting intensity and the light emitting efficiency of the LED effectively.
Description
technical field [0001] The invention relates to the field of optics and laser technology, in particular to LED microstructure technology and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode (LED) is a new type of green light source. With its unique advantages, it will lead the future development trend in the lighting field and will become the "fourth generation light source" after incandescent lamps, fluorescent lamps, and high-intensity gas discharge lamps. . At the same time, LED has the advantages of small size, light weight, good directionality, long life, energy saving, environmental protection, etc., and is widely used in many aspects of our daily life. However, considering the high initial manufacturing cost of high-performance LEDs, it is necessary to realize them in the lighting field To fully replace the existing traditional lighting sources needs to further improve the luminous efficiency of LEDs. Improving the lum...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(China)
IPC IPC(8): B23K26/046B23K26/352H01L33/20
CPCB23K26/046B23K26/352H01L33/20
Inventor张帆赵于前段吉安
OwnerCENT SOUTH UNIV