Chamber liners, plasma reaction chambers and plasma equipment

Abstract

The invention provides a cavity lining, a plasma reaction chamber and a plasma equipment. The cavity inner liner includes a bottom wall liner and a side wall liner, the side wall liner is arranged around the bottom wall liner to form a process cavity, and the middle of the bottom wall liner is formed for arranging a bias electrode The bottom wall liner is provided with a plurality of air extraction holes which penetrate through the bottom wall liner along the thickness direction of the bottom wall liner, and the upper surface of the bottom wall liner faces the process The cavity has a convex curved surface, and the height of the curved surface gradually decreases in the direction from the accommodating opening to the connection between the bottom wall liner and the side wall liner. The application of the cavity lining to the plasma equipment is beneficial to improve the consistency of the wafer surface reaction.

Description

technical field [0001] The present invention relates to the field of plasma technology, and more particularly, to a cavity lining, a plasma reaction chamber and a plasma equipment. Background technique [0002] Plasma equipment such as plasma etching equipment or plasma deposition equipment or the like. In plasma equipment, free radicals or ions in the plasma move to the wafer surface and interact with the wafer. The uniformity of the etching or deposition of the wafer is affected by the uniformity of the plasma distribution. The uniformity of plasma distribution is affected by the extraction of plasma and reaction by-products from the reaction chamber. [0003] see figure 1 The plasma device shown is a typical inductively coupled plasma device. The source RF source 1 delivers RF energy to the inductive coil 4 through the matcher 2 . The reaction gas enters the cavity through the gas inlet pipe 3 . The induction coil 4 excites the plasma 6 in the cavity space through t...

AI Technical Summary

Problems solved by technology

[0004] Existing plasma equipment exists that the plasma is extracted at the edge of the wafer 8 at an excessively high speed, resulting in the etching rate or deposition rate at the edge of the wafer being lower than the etching rate or deposition rate at the center of the wafer.

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