Photoetching method
A technology of photolithography and photolithography, applied in the field of photolithography, can solve problems such as changes in chemical properties and the failure of the outermost circle of graphics to meet the process requirements, to achieve the effect of ensuring consistency and improving product yield
Active Publication Date: 2020-03-06
LATTICE POWER (JIANGXI) CORP
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Problems solved by technology
[0004] In order to overcome the above deficiencies, the present invention provides a photolithography method, which effectively solves the technical problem that the change of the chemical properties of the photoresist during the photolithography process in the existing production process causes the outermost pattern to fail to meet the process requirements.
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[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.
[0017] Based on the fact that the unit pattern in the outermost circle of the wafer will be connected to the large-area photoresist in the wrapping area in the prior art, which may cause the technical problem that the outermost pattern cannot meet the process requirements, this application provides a New lithography methods, such as figure 1 As shown, the photolithography method includes: S1 provides a semiconductor wafer, and forms a photoresist layer on the semiconductor wafer; ...
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Abstract
The invention provides a photoetching method, which comprises the following steps of: providing a semiconductor wafer, and forming a photoresist layer on the semiconductor wafer, aligning the semiconductor wafer with a photoetching plate based on the alignment mark on the surface of the photoetching plate, wherein the photoetching plate further comprises a mark position for isolating a graphic area from a non-graphic area, and exposing and developing the photoresist layer on the surface of the semiconductor wafer so as to pattern the photoresist layer. In the photoetching process, the photoresist in the non-pattern area on the edge of the wafer is isolated from the pattern area through the mark position, so that the consistency of patterns on the outermost circle of the wafer is ensured, and the product yield is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photolithography method. Background technique [0002] The manufacture of semiconductor devices requires hundreds of processes. Photolithography, as the main process step of patterning, plays a pivotal role in the manufacture of semiconductor devices. As the structure of semiconductor devices becomes more and more complex, there are more and more photolithography processes. In order to ensure the production yield of semiconductor devices, the mutual alignment between photolithographic patterns is particularly important. [0003] At present, in the contact / proximity lithography process of semiconductors and LEDs, the wrapping process is almost always used, that is, no graphics are made within a few millimeters of the edge of the wafer. When the wrapping area is completely covered by the photoresist, the unit pattern in the outermost circle of the wafer will be connected ...
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IPC IPC(8): G03F9/00
CPCG03F9/7073
Inventor 黄涛
Owner LATTICE POWER (JIANGXI) CORP