A method for measuring electrothermal coupling characteristics of thyristor devices
An electrothermal coupling and measurement method technology, applied in the field of power electronics, can solve problems such as IGCT, ETO prone to fatigue, incomplete matching and adaptation of thermal parameters such as thermal conductivity and thermal expansion coefficient, failure of devices and power electronic devices, etc.
Active Publication Date: 2022-03-22
STATE GRID ZHEJIANG ELECTRIC POWER +1
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Problems solved by technology
Due to the thermal conductivity, heat capacity ratio, and thermal expansion coefficient of the materials used in the physical relative layers of IGCT (integrated Gate Commutated Thyristors, integrated gate commutated thyristors), ETO (emitter turn-off thyristors) and other device shell packages, etc. The parameters are not completely matched and adapted, so IGCT, ETO, etc. are prone to fatigue under the action of thermal stress, which leads to the failure of these devices and power electronic devices
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[0021] In order to make the objects, technical solutions and advantages of the present invention more apparent, exemplary embodiments according to the present invention will be described in detail below with reference to the accompanying drawings. Apparently, the described embodiments are only some embodiments of the present invention, rather than all embodiments of the present invention, and it should be understood that the present invention is not limited by the exemplary embodiments described here. Based on the embodiments described herein, all other embodiments obtained by those skilled in the art without creative effort shall fall within the protection scope of the present invention. In this specification and the drawings, substantially the same elements and functions will be denoted by the same reference numerals, and repeated descriptions of these elements and functions will be omitted. Also, descriptions of functions and constructions that are well known in the art may...
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The present invention provides a method for measuring the electrothermal coupling characteristics of a physically packaged thyristor device, the method comprising: step 1, performing constant temperature treatment on the physically packaged thyristor device to reach a predetermined temperature; step 2, using a measurement loop to measure the physical package One or more of the following parameters of the thyristor: gate-cathode voltage, gate-cathode current, anode current, and cathode-anode voltage; Step 3, increase the predetermined temperature by a certain temperature value, and return to Step 2; Step 4, based on the obtained The above parameters are fitted to form a fitted curve. The measurement method provided by the invention realizes the measurement of the electrothermal coupling characteristics of devices such as IGCT / ETO.
Description
technical field [0001] The invention belongs to the technical field of power electronics, in particular to a method for measuring the electrothermal coupling characteristics of a thyristor device. Background technique [0002] Among the key power electronic equipment of the DC grid, the converter is the most prone to failure. Due to the thermal conductivity, heat capacity ratio, and thermal expansion coefficient of the materials used in the physical relative layers of IGCT (integrated Gate Commutated Thyristors, integrated gate commutated thyristors), ETO (emitter turn-off thyristors) and other device shell packages, etc. The parameters are not perfectly matched and adapted, so IGCT, ETO, etc. are prone to fatigue under the action of thermal stress, which leads to the failure of these devices and power electronic devices. Therefore, the analysis and measurement of the electrothermal coupling characteristics during the operation of high-power IGCT / ETO has great academic rese...
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IPC IPC(8): G01R31/26
CPCG01R31/263
Inventor 许超群余占清曾嵘庄池杰赵彪屈鲁刘佳鹏周文鹏
Owner STATE GRID ZHEJIANG ELECTRIC POWER