Magnetic Tunnel Junction Memory Cell and Memory
A technology of magnetic tunnel junction and storage unit, applied in the field of magnetic tunnel junction storage unit and memory, can solve the problems of power consumption and processing cost, and achieve the effect of reducing power consumption and processing cost
Active Publication Date: 2021-08-27
致真精仪(北京)科技有限公司
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This method limits the means of flipping and consumes a lot of power consumption and processing costs
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] In view of the limitation of the flipping means in the existing technology, which consumes a lot of power consumption and processing costs, the embodiment of the present invention provides a magnetic tunnel junction storage unit and memory, which can complete information writing in a non-magnetic environment, reducing power consumption and Processing costs. The present invention will be described in detail below in conjunction with the accompanying draw...
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Abstract
The invention provides a magnetic tunnel junction memory unit and a memory. The magnetic tunnel junction memory cell includes: a top electrode, a ferromagnetic free layer, a tunneling layer, a ferromagnetic reference layer, a phase change layer, a ferromagnetic pinned layer, an antiferromagnetic pinning layer and a bottom electrode; the phase change layer Located between the ferromagnetic reference layer and the ferromagnetic pinned layer, it has a phase change characteristic in response to external temperature changes or external light changes; wherein, the ferromagnetic pinned layer has a fixed magnetization direction; the ferromagnetic reference layer is located in the phase Between the variable layer and the tunneling layer, it has a changing magnetization direction in response to the phase transition characteristics; the antiferromagnetic pinning layer is located between the ferromagnetic pinned layer and the bottom electrode, and has a fixed magnetization direction; the ferromagnetic free The layer is located between the tunneling layer and the top electrode, has a fixed magnetization direction, and can complete information writing in a non-magnetic environment, reducing power consumption and processing costs.
Description
technical field [0001] The invention relates to the technical field of spin electronics, in particular to a magnetic tunnel junction memory unit and a memory. Background technique [0002] Memory is one of the five major hardware systems of computers under the Von Neumann architecture, and its main function is to store programs and data. At present, memory is mainly divided into three categories: magnetic, optoelectronic and semiconductor. Among them, the magnetic memory is made of the spin characteristics of the material, and the parallel and antiparallel arrangement of the spin orientation between the reference layer and the free layer is used to form a high and low resistance state to store "0" and "1" in the binary system, which is non-volatile. , high stability and other advantages, with a wide range of application background. With the continuous development of electronic information technology, especially computer technology, magnetic memory is also constantly innova...
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IPC IPC(8): H01L43/08H01L43/10G11C11/16H10N50/10
CPCG11C11/161G11C11/1675H10N50/10H10N50/85
Inventor 林晓阳尉国栋范晓飞赵巍胜
Owner 致真精仪(北京)科技有限公司