In-plane magnetic random access memory and reading/writing method thereof

Abstract

The invention provides an in-plane magnetic random access memory using a topological insulator as an electron spin filter. The in-plane magnetic random access memory comprises a reference layer, a memory layer, a barrier layer and a spin filter layer composed of topological insulator layers and dielectric layers arranged alternately and repeatedly, wherein a magnetization direction of the reference layer is unchanged and magnetic anisotropy is parallel to the surface of the layer; a magnetization direction of the memory layer is variable and magnetic anisotropy is parallel to the surface of the layer; the barrier layer is located between the reference layer and the memory layer, and is adjacent to the reference layer and the memory layer; the spin filter layer comprises a first polar part and a second polar part which are spaced; and the first polar part and the second polar part are electrically connected with the memory layer, and a complete writing circuit is formed. The invention furthermore provides a reading / writing method for the magnetic random access memory.

Description

Technical field [0001] The present invention relates to the field of semiconductor memory, and in particular to an in-plane magnetic random access memory using a topological insulator as an electron spin filter and a reading and writing method thereof. Background technique [0002] Spintronics (Spintronics) is also called magnetoelectronics. It uses the spin and magnetic moment of electrons to add the spin and magnetic moment of electrons to solid-state devices in addition to charge transport. It is an emerging discipline and technology. Materials used in spintronics need to have a higher electronic magnetic susceptibility and a longer electron relaxation time. Many new materials, such as magnetic semiconductors, semi-metals (also known as Heusler metals, see: https: / / en.wikipedia.org / wiki / Heusler_alloy), topological insulators (TI, Topological Insulator, reference: Physics and Engineering, Vol. 22, No. 1, 2012), etc., have been extensively studied in recent years in order to h...

AI Technical Summary

Problems solved by technology

Such a write operation not only consumes power, but also reduces the memory capacity of the memory due to the heat generated by a large amount of non-polarizing current, and accelerates the aging of the memory

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