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In-plane magnetic random access memory and reading/writing method thereof

A random access memory, magnetic technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of accelerating memory aging, reducing memory capacity, power consumption, etc.

Active Publication Date: 2017-11-21
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a write operation not only consumes power, but also reduces the memory capacity of the memory due to the heat generated by a large amount of non-polarizing current, and accelerates the aging of the memory

Method used

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  • In-plane magnetic random access memory and reading/writing method thereof
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Embodiment Construction

[0029] In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", " The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention And to simplify the description, rather than indicating or implying that the pointed device or element must have a specific orientation, be configured and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0030] figure 2 It is a schematic structural diagram of a magnetic random access memory of the present invention, which shows the substrate layer 1, the memory layer 2, the barrier layer 3, the reference layer 4, the cover layer 5 and the top electrode 6 st...

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Abstract

The invention provides an in-plane magnetic random access memory using a topological insulator as an electron spin filter. The in-plane magnetic random access memory comprises a reference layer, a memory layer, a barrier layer and a spin filter layer composed of topological insulator layers and dielectric layers arranged alternately and repeatedly, wherein a magnetization direction of the reference layer is unchanged and magnetic anisotropy is parallel to the surface of the layer; a magnetization direction of the memory layer is variable and magnetic anisotropy is parallel to the surface of the layer; the barrier layer is located between the reference layer and the memory layer, and is adjacent to the reference layer and the memory layer; the spin filter layer comprises a first polar part and a second polar part which are spaced; and the first polar part and the second polar part are electrically connected with the memory layer, and a complete writing circuit is formed. The invention furthermore provides a reading / writing method for the magnetic random access memory.

Description

Technical field [0001] The present invention relates to the field of semiconductor memory, and in particular to an in-plane magnetic random access memory using a topological insulator as an electron spin filter and a reading and writing method thereof. Background technique [0002] Spintronics (Spintronics) is also called magnetoelectronics. It uses the spin and magnetic moment of electrons to add the spin and magnetic moment of electrons to solid-state devices in addition to charge transport. It is an emerging discipline and technology. Materials used in spintronics need to have a higher electronic magnetic susceptibility and a longer electron relaxation time. Many new materials, such as magnetic semiconductors, semi-metals (also known as Heusler metals, see: https: / / en.wikipedia.org / wiki / Heusler_alloy), topological insulators (TI, Topological Insulator, reference: Physics and Engineering, Vol. 22, No. 1, 2012), etc., have been extensively studied in recent years in order to h...

Claims

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Application Information

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IPC IPC(8): G11C11/16H01L27/22H01L43/08
CPCG11C11/161G11C11/1673G11C11/1675H10B61/00H10N50/10
Inventor 肖荣福郭一民
Owner SHANGHAI CIYU INFORMATION TECH