In-plane magnetic random access memory and method for reading and writing the same

Abstract

The invention provides an in-plane magnetic random access memory using a topological insulator as an electronic spin filter, including a reference layer, a memory layer, a potential barrier layer, and a spin composed of repeated and alternately arranged topological insulator layers and dielectric layers. filter layer; the magnetization direction of the reference layer is constant and the magnetic anisotropy is parallel to the layer surface; the magnetization direction of the memory layer is variable and the magnetic anisotropy is parallel to the layer surface; the barrier layer is located on the reference layer and the memory layer and are respectively adjacent to the reference layer and the memory layer; the spin filter layer includes a first polarity part and a second polarity part spaced apart, and the first pole The polarity portion and the second polarity portion are respectively electrically connected to the memory layer and form a complete write circuit. The present invention also provides a method for reading and writing the magnetic random access memory.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to an in-plane magnetic random access memory using a topological insulator as an electronic spin filter and a reading and writing method thereof. Background technique [0002] Spintronics (Spintronics) is also called magnetoelectronics. It uses the spin and magnetic moment of electrons to add electron spin and magnetic moment to solid-state devices in addition to charge transport. It is a new subject and technology. Materials used in spintronics need to have high electron magnetic polarizability and long electron relaxation time. Many new materials, such as magnetic semiconductors, semimetals (also known as Heusler metals, see: https: / / en.wikipedia.org / wiki / Heusler_alloy), topological insulators (TI, Topological Insulator, reference: Physics and Engineering, Vol. 22, No.1, 2012), etc., have been widely studied in recent years, in order to have the properties required for the ap...

AI Technical Summary

Problems solved by technology

Such a write operation not only consumes power, but also reduces the memory capacity of the memory due to the heat generated by a large amount of non-polarizing current, and accelerates the aging of the memory

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