IGBT power device
A technology of power devices and gate trenches, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem that the distance between gate trenches is difficult to reduce, achieve size reduction, reduce the limitation of photolithography process conditions, and reduce pitch Effect
Inactive Publication Date: 2020-04-07
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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Problems solved by technology
[0004] In view of this, the purpose of the present invention is to provide an IGBT power device to solve the problem that the distance between adjacent gate trenches in the IGBT power device in the prior art is difficult to reduce
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[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.
[0028] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description...
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The invention belongs to the technical field of IGBT power devices, and particularly discloses an IGBT power device. The IGBT power device which comprises: a semiconductor substrate; at least one group of adjacent first gate trench and second gate trench; at least one body region located between the first gate trenches and the second gate trenches; at least one emitter region in the at least one body region; gate dielectric layers and control gates which are respectively positioned in each first gate trench and each second gate trench; at least one emitter contact hole located above the at least one body region, wherein the emitter contact holes extend to the positions above the first gate trenches, and the body regions, the emitter regions and the control gates in the first gate trenches are externally connected with an emitter voltage through emitter metal layers in the emitter contact holes. According to the invention, the distance between the adjacent gate trenches in the IGBT power device can be reduced, so that the size of the IGBT power device chip can be reduced.
Description
technical field [0001] The invention belongs to the technical field of IGBT power devices, in particular to an IGBT power device capable of reducing the distance between adjacent gate trenches. Background technique [0002] figure 1 It is a schematic cross-sectional structure diagram of an IGBT power device in the prior art, such as figure 1 As shown, an IGBT power device in the prior art includes: a semiconductor substrate 100, a p-type collector region 10 located at the bottom of the semiconductor substrate 100, a p-type collector region 10 located in the semiconductor substrate 100 and above the p-type collector region 10 N-type field stop region 90, a plurality of gate trenches located in semiconductor substrate 100, p-type body regions 16 located between adjacent gate trenches, and n-type emitters located in p-type body regions 16 Region 17, the part of the semiconductor substrate between the p-type body region 16 and the n-type field stop region 90 is the n-type drif...
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Login to View More IPC IPC(8): H01L29/739H01L29/423H01L29/08
CPCH01L29/0804H01L29/4236H01L29/7397
Inventor 刘伟袁愿林刘磊毛振东
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD