Semiconductor power device
A technology for power devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of difficulty in reducing the spacing between gate trenches, reduce on-resistance, reduce the limitations of lithography process conditions, and reduce spacing. Effect
Inactive Publication Date: 2020-04-07
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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Problems solved by technology
[0004] In view of this, the object of the present invention is to provide a semiconductor power device to solve the problem that the distance between adjacent gate trenches in the prior art semiconductor power device is difficult to reduce
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[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.
[0025] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description...
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The invention belongs to the technical field of semiconductor power devices, and particularly discloses a semiconductor power device. The semiconductor power device comprises: a semiconductor substrate; at least one gate trench in the semiconductor substrate; a gate dielectric layer, a first control gate, a second control gate, an isolation dielectric layer and a shielding gate which are located in each gate trench; a body region positioned in the semiconductor substrate and close to one side of each first control gate; a source region located in each body region; a source electrode contact hole located above each body region and extending to the position above each gate trench, wherein the body regions, the source regions, the first control gates and the shielding gates are externally connected with a source electrode voltage through source electrode metal layers in the source electrode contact holes. According to the invention, the distance between adjacent gate trenches in the semiconductor power device can be reduced, so that the doping concentration of the semiconductor substrate can be improved, and the on-resistance is reduced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a semiconductor power device capable of reducing the distance between adjacent gate trenches. Background technique [0002] figure 1 It is a schematic cross-sectional structure diagram of a semiconductor power device in the prior art, such as figure 1 As shown, a semiconductor power device in the prior art includes: an n-type semiconductor substrate 100, an n-type drain region 10 located at the bottom of the n-type semiconductor substrate 100, located in the n-type semiconductor substrate 100 and located at the n-type drain region The n-type drift region 11 above the region 10 is located in a plurality of gate trenches in the n-type semiconductor substrate 100, and the p-type body region 16 between adjacent gate trenches is located in the p-type body region 16 The n-type source region 17 in the gate trench is located at the gate dielectric layer 12, the cont...
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Login to View More IPC IPC(8): H01L29/78H01L29/417
CPCH01L29/41741H01L29/41766H01L29/41775H01L29/7813
Inventor 王睿刘伟毛振东袁愿林
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD